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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
CSD87588N
CSD87588N

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 25A 5PTAB

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-XFLGA
  • Supplier Device Package: 5-PTAB (3x2.5)
In Stock2,643
CSD87588NT
CSD87588NT

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 25A 5PTAB

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-LGA
  • Supplier Device Package: 5-PTAB (5x3.5)
In Stock47,136
CSD88537ND
CSD88537ND

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 15A 8SOIC

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
In Stock17,254
CSD88537NDT
CSD88537NDT

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 15A 8SOIC

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock31,752
CSD88539ND
CSD88539ND

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 15A 8SOIC

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
In Stock11,697
CSD88539NDT
CSD88539NDT

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 15A 8SOIC

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock18,738
CSD88584Q5DC
CSD88584Q5DC

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 40V 22-VSON-CLIP

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
In Stock3,420
CSD88584Q5DCT
CSD88584Q5DCT

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 40V 22-VSON-CLIP

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
In Stock18,078
CSD88599Q5DC
CSD88599Q5DC

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 60V 22-VSON-CLIP

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
In Stock3,096
CSD88599Q5DCT
CSD88599Q5DCT

Texas Instruments

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 60V 22-VSON-CLIP

  • Manufacturer:
  • Series: NexFET™
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
In Stock7,290
CTLDM303N-M832DS BK
CTLDM303N-M832DS BK

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET DUAL N-CHANNEL

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock4,194
CTLDM303N-M832DS TR
CTLDM303N-M832DS TR

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.6A TLM832DS

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock2,772
CTLDM304P-M832DS TR
CTLDM304P-M832DS TR

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 4.2A TLM832DS

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 1.65W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock2,502
CTLDM7120-M832DS BK
CTLDM7120-M832DS BK

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET DUAL N-CHANNEL

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock6,192
CTLDM7120-M832DS TR
CTLDM7120-M832DS TR

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 1A

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock4,248
CTLDM8120-M832DS BK
CTLDM8120-M832DS BK

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET DUAL N-CHANNEL

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V
  • Power - Max: 1.65W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock2,718
CTLDM8120-M832DS TR
CTLDM8120-M832DS TR

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET DUAL N-CHANNEL

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V
  • Power - Max: 1.65W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
In Stock3,942
CWDM305ND TR13
CWDM305ND TR13

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5.8A 8SOIC

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
In Stock5,148
CWDM305PD TR13
CWDM305PD TR13

Central Semiconductor Corp

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 5.3A 8SOIC

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
In Stock7,650
DF11MR12W1M1B11BOMA1
DF11MR12W1M1B11BOMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET MODULE 1200V 50A

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
In Stock3,978
DF11MR12W1M1B11BPSA1
DF11MR12W1M1B11BPSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET MOD 1200V 50A

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
In Stock7,542
DF23MR12W1M1B11BOMA1
DF23MR12W1M1B11BOMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET MODULE 1200V 25A

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
In Stock2,610
DF23MR12W1M1B11BPSA1
DF23MR12W1M1B11BPSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET MOD 1200V 25A

  • Manufacturer: Infineon Technologies
  • Series: CoolSiC™+
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
  • Vgs(th) (Max) @ Id: 5.55V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
In Stock6,696
DI9942T
DI9942T

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 2.5A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock3,078
DI9945T
DI9945T

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 3.5A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock5,220
DI9952T
DI9952T

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 2.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock5,814
DI9956T
DI9956T

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.7A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock7,272
DMC1015UPD-13
DMC1015UPD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 8V 24V POWERDI5060-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
In Stock19,632
DMC1016UPD-13
DMC1016UPD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 8V 24V POWERDI5060-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
In Stock5,490
DMC1017UPD-13
DMC1017UPD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 9.5A/6.9A SMD

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 9.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V, 23.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V, 2100pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
In Stock4,104