Transistors

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Records 64,903

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Part Number	Description	In Stock
ALD114904APAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock5,076
ALD114904ASAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock7,434
ALD114904PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock7,434
ALD114904SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock6,540
ALD114913PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V Vgs(th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock2,952
ALD114913SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V Vgs(th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock6,288
ALD114935PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540Ohm @ 0V Vgs(th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock2,088
ALD114935SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD® FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540Ohm @ 0V Vgs(th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock6,804
ALD210800APCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs(th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock5,490
ALD210800ASCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs(th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock8,892
ALD210800PCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock8,838
ALD210800SCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock5,436
ALD210802PCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock3,636
ALD210802SCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock8,514
ALD210804PCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock5,076
ALD210804SCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock6,516
ALD210808APCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock7,164
ALD210808ASCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock7,362
ALD210808PCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock8,514
ALD210808SCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock3,402
ALD210814PCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	In Stock6,102
ALD210814SCL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock2,664
ALD212900APAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs(th) (Max) @ Id: 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock5,490
ALD212900ASAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs(th) (Max) @ Id: 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock3,456
ALD212900PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs(th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock5,688
ALD212900SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs(th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock6,336
ALD212902PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock3,798
ALD212902SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock7,524
ALD212904PAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	In Stock3,222
ALD212904SAL Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Manufacturer: Advanced Linear Devices Inc. Series: EPAD®, Zero Threshold™ FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock3,474

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