Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 718/2164

Part Number	Description	In Stock
UNRF2AN00A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 100MW ML3-N2 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: ML3-N2	In Stock4,950
UNRL11100A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock3,598
UNRL11300A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock4,176
UNRL11500A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock7,326
UNRL21100A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock4,392
UNRL21300A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock6,966
UNRL21500A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW ML4-N1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-103 Supplier Device Package: ML4-N1	In Stock8,226
UP0KG8D00L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.125W SSMINI5 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP - Pre-Biased + Diode Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F2	In Stock7,956
XP0NG8A00L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.15W SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP - Pre-Biased + Diode Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock3,510
19MT050XF Vishay Semiconductor Diodes Division	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 31A MTP Manufacturer: Vishay Semiconductor Diodes Division Series: HEXFET® FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 31A Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V Power - Max: 1140W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: 16-MTP	In Stock8,172
2N7002BKS,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A 6TSSOP Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 295mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	In Stock4,773,876
2N7002BKS/ZLX Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 300MA SOT363 Manufacturer: Nexperia USA Inc. Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 1.04W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock6,174
2N7002BKV,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.34A SOT666 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 350mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	In Stock252,330
2N7002DW ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.115A SC70-6 Manufacturer: ON Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	In Stock743,358
2N7002DW-13-G Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOT-363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,734
2N7002DW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock3,024
2N7002DW-7-F Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock3,619,998
2N7002DW-7-F-79 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOT-363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,784
2N7002DW-7-G Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOT-363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,340
2N7002DWA-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.18A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock7,416
2N7002DWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A SOT363 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock634,812
2N7002DWKX-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOT-363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,992
2N7002DWKX-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOT-363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,436
2N7002DW L6327 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A SOT363 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	In Stock5,112
2N7002DWQ-7-F Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock1,879,626
2N7002DWS-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V SOT363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,172
2N7002DW-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.115A SOT-363 Manufacturer: Micro Commercial Co Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock2,353,998
2N7002KDWA-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL MOSFET EFFECT,SOT-363 Manufacturer: Micro Commercial Co Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock229,338
2N7002KDW-TP Micro Commercial Co	Transistors - FETs, MOSFETs - Arrays N-CHANNEL,MOSFETS,SOT-363 PACKAG Manufacturer: Micro Commercial Co Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock281,172
2N7002PS,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.32A 6TSSOP Manufacturer: Nexperia USA Inc. Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 420mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	In Stock791,112

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