Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 702/2164

Part Number	Description	In Stock
RN2106ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock80,352
RN2106CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock3,744
RN2106,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR4.7KOHM Q1BER47KOHM Manufacturer: Toshiba Semiconductor and Storage Series: * Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1): - Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,910
RN2106(T5L,F,T) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock2,322
RN2107ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock2,376
RN2107CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock3,492
RN2107,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock2,736
RN2107MFV,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock7,794
RN2108ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock5,958
RN2108CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock6,984
RN2108,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR22KOHM Q1BER47KOHM Manufacturer: Toshiba Semiconductor and Storage Series: * Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1): - Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,304
RN2108MFV,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock3,474
RN2108(T5L,F,T) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock3,978
RN2109ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock8,802
RN2109CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock7,128
RN2109,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BER22KOHM Manufacturer: Toshiba Semiconductor and Storage Series: * Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1): - Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,240
RN2109MFV,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock7,434
RN2110ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock86,004
RN2110CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock5,814
RN2110,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock4,302
RN2110MFV,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock7,704
RN2111ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock88,800
RN2111CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock2,016
RN2111,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock5,400
RN2111MFV,L3F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	In Stock2,376
RN2112ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock107,928
RN2112CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock6,732
RN2112,LF(CT Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.1W SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock27,690
RN2113ACT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock92,964
RN2113CT(TPL3) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	In Stock5,724

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