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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
PDTA144VM,315
PDTA144VM,315

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SOT883

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
In Stock2,826
PDTA144VMB,315
PDTA144VMB,315

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW 3DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 180MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: DFN1006B-3
In Stock5,958
PDTA144VS,126

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 500MW TO92-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock2,412
PDTA144VT,215
PDTA144VT,215

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW TO236AB

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock7,236
PDTA144VU,115
PDTA144VU,115

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SOT323

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock6,354
PDTA144WE,115

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 150MW SC75

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
In Stock3,598
PDTA144WK,115

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SMT3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock8,784
PDTA144WM,315
PDTA144WM,315

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SOT883

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
In Stock5,598
PDTA144WMB,315
PDTA144WMB,315

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW 3DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 180MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: DFN1006B-3
In Stock6,300
PDTA144WS,126

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 500MW TO92-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock2,178
PDTA144WT,215
PDTA144WT,215

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW TO236AB

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock6,696
PDTA144WU,115
PDTA144WU,115

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SOT323

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock5,040
PDTA323TK,115

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SMT3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock2,754
PDTB113EK,115

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SMT3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock5,148
PDTB113EQAZ
PDTB113EQAZ

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 3DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 325mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
In Stock7,074
PDTB113ES,126

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 500MW TO92-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock2,556
PDTB113ET,215
PDTB113ET,215

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW TO236AB

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock4,338
PDTB113EUF
PDTB113EUF

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock3,186
PDTB113EUX
PDTB113EUX

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock4,284
PDTB113ZK,115

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW SMT3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
In Stock7,848
PDTB113ZQAZ
PDTB113ZQAZ

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 3DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 325mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
In Stock3,564
PDTB113ZS,126

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 500MW TO92-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock8,172
PDTB113ZT,215
PDTB113ZT,215

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 250MW TO236AB

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock117,522
PDTB113ZUF
PDTB113ZUF

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock3,222
PDTB113ZUX
PDTB113ZUX

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock2,826
PDTB114EQAZ
PDTB114EQAZ

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 3DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 325mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
In Stock8,676
PDTB114ETR
PDTB114ETR

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.46W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 320mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock26,004
PDTB114ETVL
PDTB114ETVL

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.46W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 320mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
In Stock3,654
PDTB114EUF
PDTB114EUF

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock6,228
PDTB114EUX
PDTB114EUX

Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.425W

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
In Stock2,466