Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

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Part Number	Description	In Stock
EMD5T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock5,796
EMD62T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock4,698
EMD6FHAT2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PNP+NPN DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock3,168
EMD6T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock5,238
EMD9FHAT2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased PNP+NPN DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock8,784
EMD9T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock6,084
EMF17T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock3,580
EMF18XV6T5G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT563 Manufacturer: ON Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock2,646
EMF21-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT563 Manufacturer: Diodes Incorporated Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock3,186
EMF21T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock5,400
EMF22T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock4,680
EMF24T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 180MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock7,614
EMF5T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock70,140
EMF5XV6T5 ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.5W SOT56 Manufacturer: ON Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock3,726
EMF5XV6T5G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP SOT563 Manufacturer: ON Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock7,506
EMF8T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN 0.15W EMT6 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock4,806
EMG11T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock66,858
EMG1T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock3,454
EMG2DXV5T1 ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553 Manufacturer: ON Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	In Stock8,118
EMG2DXV5T1G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553 Manufacturer: ON Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	In Stock3,294
EMG2DXV5T5 ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553 Manufacturer: ON Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	In Stock6,102
EMG2DXV5T5G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.23W SOT553 Manufacturer: ON Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	In Stock3,330
EMG2T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock5,544
EMG3T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT3 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	In Stock7,398
EMG4T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock5,922
EMG5T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock83,772
EMG6T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock4,824
EMG8T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock160,392
EMG9T2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 Manufacturer: Rohm Semiconductor Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	In Stock2,844
EMH10FHAT2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased NPN+NPN DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	In Stock82,584

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