Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

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Part Number	Description	In Stock
BCR166E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock5,004
BCR166E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock7,902
BCR 166F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock5,904
BCR 166L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock8,190
BCR 166T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock4,356
BCR166WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock3,186
BCR166WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock8,928
BCR169E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,010
BCR 169F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock7,308
BCR 169L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock4,932
BCR 169T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock7,686
BCR169WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock4,860
BCR169WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock4,158
BCR 179F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock3,348
BCR 179L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock7,596
BCR 179T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock7,740
BCR 183 B6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,784
BCR183E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock197,220
BCR183E6359HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock6,534
BCR183E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,226
BCR 183F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock7,920
BCR 183L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock6,894
BCR 183T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock5,346
BCR183WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock2,790
BCR183WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock7,254
BCR185E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,622
BCR185E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock2,988
BCR 185F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	In Stock5,040
BCR 185L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock2,718
BCR 185T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Series: - Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock3,384

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