Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
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Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
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Transistors - Special Purpose (162)

Records 64,903

Page 471/2164

Part Number	Description	In Stock
KSE350STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 20W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock3,474
KSE44H11 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock21,732
KSE44H11TU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock17,526
KSE45H11 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock21,996
KSE45H11TU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock18,810
KSE45H8 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,480
KSE45H8TU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 10A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,750
KSE5020AS ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 500V 3A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 5V Power - Max: 30W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock3,240
KSE5020S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 500V 3A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 5V Power - Max: 30W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock2,232
KSE5740TU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 300V 8A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,498
KSE5741TU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 350V 8A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock8,640
KSE5742 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 400V 8A TO-220 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock5,940
KSE700S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock6,156
KSE700STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock3,924
KSE701STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock5,022
KSE702S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock6,426
KSE702STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock4,950
KSE703S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock2,088
KSE703STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock3,366
KSE800S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock8,874
KSE800STSSTU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock8,586
KSE800STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock5,886
KSE801STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 60V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock4,050
KSE802STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock2,016
KSE803S ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock2,214
KSE803STU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 80V 4A TO-126 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	In Stock8,748
KSH112GTM ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A DPAK Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock3,744
KSH112GTM_NB82051 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A DPAK Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock6,894
KSH112GTM_SB82051 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A DPAK Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock3,546
KSH112ITU ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A I-PAK Manufacturer: ON Semiconductor Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK	In Stock3,492

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