Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 40/2164
Image
Part Number
Description
In Stock
Quantity
ULN2004ADRE4
ULN2004ADRE4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SOIC

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
In Stock3,474
ULN2004ADRG4
ULN2004ADRG4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SOIC

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
In Stock5,472
ULN2004AFWG,N,E
ULN2004AFWG,N,E

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SOL

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOL
In Stock15,480
ULN2004AID
ULN2004AID

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SOIC

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
In Stock12,738
ULN2004AIDR
ULN2004AIDR

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SOIC

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
In Stock6,372
ULN2004AIN
ULN2004AIN

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16DIP

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
In Stock24,198
ULN2004AINS
ULN2004AINS

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SO
In Stock2,340
ULN2004AINSE4
ULN2004AINSE4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SO
In Stock2,340
ULN2004AINSG4
ULN2004AINSG4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SO
In Stock2,376
ULN2004AINSR
ULN2004AINSR

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SO
In Stock6,984
ULN2004AN
ULN2004AN

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16DIP

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
In Stock29,658
ULN2004ANG4
ULN2004ANG4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16DIP

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
In Stock5,274
ULN2004ANSR
ULN2004ANSR

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SO
In Stock3,978
ULN2004APG,C,N
ULN2004APG,C,N

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16DIP

  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.47W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
In Stock7,632
ULN2004AS16-13
ULN2004AS16-13

Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer: Diodes Incorporated
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
In Stock8,622
ULN2004D1013TR
ULN2004D1013TR

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

IC PWR RELAY 7NPN 1:1 16SO

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
In Stock324,168
ULN2064B
ULN2064B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock17,190
ULN2065B
ULN2065B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock16,836
ULN2066B
ULN2066B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock17,220
ULN2067B
ULN2067B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock4,950
ULN2068B
ULN2068B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock35,160
ULN2069B
ULN2069B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock18,372
ULN2074B
ULN2074B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock3,042
ULN2075B
ULN2075B

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
In Stock21,960
ULN2801A
ULN2801A

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
In Stock19,224
ULN2802A
ULN2802A

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
In Stock12,336
ULN2803A
ULN2803A

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
In Stock158,694
ULN2803ADW
ULN2803ADW

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
In Stock24,360
ULN2803ADWG4
ULN2803ADWG4

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
In Stock85,350
ULN2803ADWR
ULN2803ADWR

Texas Instruments

Transistors - Bipolar (BJT) - Arrays

TRANS 8NPN DARL 50V 0.5A 18SO

  • Manufacturer:
  • Series: -
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
In Stock686,736