Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 263/2164

Part Number	Description	In Stock
2SD2257(CANO,Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock6,426
2SD2257,KEHINQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock3,132
2SD2257,NIKKIQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock7,632
2SD2257,Q(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock4,266
2SD2257(Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock3,186
2SD22580RA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 50V 1A MT-2 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	In Stock4,194
2SD225900A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 0.7A MT-2 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 55MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	In Stock20,682
2SD2264TV2R Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 3A ATV Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	In Stock8,622
2SD2318TLU Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A SOT-428 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 500mA, 4V Power - Max: 15W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock3,528
2SD2318TLV Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A SOT-428 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 500mA, 4V Power - Max: 15W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock6,408
2SD23210RA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 5A NS-B1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 500mA, 2V Power - Max: 400mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock6,264
2SD2345GSL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	In Stock3,490
2SD2345JSL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock5,886
2SD2351T106V Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A SOT-323 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock45,450
2SD2351T106W Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A SOT-323 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock29,304
2SD235800A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 10V 1A MT-2 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 20mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	In Stock18,876
2SD2374AP Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 3A TO-220D Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock5,796
2SD23750P Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A TO-220D Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock3,312
2SD2389 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 150V 8A TO3P Manufacturer: Sanken Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V Power - Max: 80W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock9,552
2SD2390 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 150V 10A TO-3P Manufacturer: Sanken Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V Power - Max: 100W Frequency - Transition: 55MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock8,586
2SD2391T100Q Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 2A SOT-89 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 210MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	In Stock8,280
2SD2396K Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 3A TO220 Manufacturer: Rohm Semiconductor Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 800mV @ 50mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FN	In Stock2,970
2SD2401 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 150V 12A MT200 Manufacturer: Sanken Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V Power - Max: 150W Frequency - Transition: 55MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-ESIP Supplier Device Package: MT-200	In Stock8,208
2SD2406-Y(F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 4A TO220NIS Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 25W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock5,868
2SD241300L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 400V 0.1A MINI PWR Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 5V Power - Max: 1W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1	In Stock13,764
2SD2413G0L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 400V 0.1A MINIP-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 5V Power - Max: 1W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F2	In Stock14,208
2SD2420AP Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 4A TO-220D Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 3A, 3V Power - Max: 2W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	In Stock7,794
2SD2425-T1-AZ Renesas Electronics America	Transistors - Bipolar (BJT) - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,286
2SD2438 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 150V 8A TO3PF Manufacturer: Sanken Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V Power - Max: 75W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock7,884
2SD2439 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 150V 10A TO3PF Manufacturer: Sanken Series: - Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V Power - Max: 80W Frequency - Transition: 55MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock2,322

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