Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 207/2164

Part Number	Description	In Stock
2SA1776TV2Q Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 400V 0.5A ATV Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Power - Max: 1W Frequency - Transition: 12MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	In Stock6,714
2SA1790JCL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 20V 0.03A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Power - Max: 125mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock22,704
2SA1791GRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 250MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	In Stock4,536
2SA1791JRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 250MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock8,028
2SA1797-P-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Power - Max: 500mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock6,714
2SA1797T100P Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 2A SOT-89 Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	In Stock3,294
2SA1797T100Q Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 2A SOT-89 Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	In Stock23,472
2SA1806GRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 15V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V Power - Max: 125mW Frequency - Transition: 1.5GHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	In Stock2,178
2SA1806JRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 15V 0.05A SSMINI-3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V Power - Max: 125mW Frequency - Transition: 1.5GHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	In Stock3,420
2SA1807TLP Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 600V 1A TO252 Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock4,104
2SA1812T100Q Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 400V 0.5A SOT-89 Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Power - Max: 500mW Frequency - Transition: 12MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	In Stock3,438
2SA1827S-AY ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 100V 4A FLP Manufacturer: ON Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1.5W Frequency - Transition: 180MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 No Tab Supplier Device Package: FLP	In Stock6,246
2SA1832-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock6,282
2SA1832-Y-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	In Stock7,326
2SA1832-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock2,322
2SA1834TLR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 20V 10A SOT-428 Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock59,178
2SA1834TLS Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 20V 10A SOT-428 TR Manufacturer: Rohm Semiconductor Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock3,472
2SA1836-T1-A Renesas Electronics America	Transistors - Bipolar (BJT) - Single TRANSISTOR PNP USM SC-75 Manufacturer: Renesas Electronics America Series: - Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,244
2SA1837,F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock4,176
2SA1837(F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 230V 1A TO220NIS Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock60,030
2SA1837,HFEMBJF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock2,214
2SA1837,HFEYHF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock6,444
2SA1837,HFEYHF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock5,472
2SA1837(LBSAN,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock4,626
2SA1837,NSEIKIF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock2,088
2SA1837(PAIO,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock7,632
2SA1837,S1CSF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock3,006
2SA1837,TOA1F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock2,340
2SA1837,WNLF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock3,436
2SA1837,YHF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock2,970

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