Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
IRG4BC30K-STRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock6,390
IRG4BC30S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock3,942
IRG4BC30SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock16,578
IRG4BC30S-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,852
IRG4BC30S-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock5,112
IRG4BC30S-STRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,078
IRG4BC30U Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock5,130
IRG4BC30UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 380µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 40ns/91ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock2,268
IRG4BC30UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock22,632
IRG4BC30U-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock7,830
IRG4BC30U-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,598
IRG4BC30U-STRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,744
IRG4BC30W Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock2,826
IRG4BC30WPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock19,944
IRG4BC30W-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock2,916
IRG4BC30W-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock2,592
IRG4BC30W-STRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock7,686
IRG4BC30W-STRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock8,046
IRG4BC30WSTRR Infineon Technologies	Transistors - IGBTs - Single IGBT D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,096
IRG4BC30W-STRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock5,436
IRG4BC40FPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 49A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 49A Current - Collector Pulsed (Icm): 196A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Power - Max: 160W Switching Energy: 370µJ (on), 1.81mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 26ns/240ns Test Condition: 480V, 27A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock30,222
IRG4BC40K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 42A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 84A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Power - Max: 160W Switching Energy: 620µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 30ns/140ns Test Condition: 480V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock7,974
IRG4BC40KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 42A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 84A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Power - Max: 160W Switching Energy: 620µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 30ns/140ns Test Condition: 480V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock2,664
IRG4BC40SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 60A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A Power - Max: 160W Switching Energy: 450µJ (on), 6.5mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 22ns/650ns Test Condition: 480V, 31A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock17,352
IRG4BC40U Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 160W Switching Energy: 320µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 34ns/110ns Test Condition: 480V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock7,218
IRG4BC40UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 160W Switching Energy: 320µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 34ns/110ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock15,228
IRG4BC40W Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 27ns/100ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock5,130
IRG4BC40W-LPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO262 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 27ns/100ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock6,480
IRG4BC40WPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO220AB Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 27ns/100ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock4,266
IRG4BC40W-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 27ns/100ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock2,124

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