Transistors

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Records 64,903

Page 2023/2164

Part Number	Description	In Stock
VS-GB100DA60UP Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules MODULE IGBT SOT-227 Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 125A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	In Stock6,552
VS-GB100LH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 833W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 100A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 8.96nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock7,560
VS-GB100LP120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 658W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 658W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 7.43nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	In Stock4,806
VS-GB100NH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 833W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.58nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock7,740
VS-GB100TH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 833W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.58nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock5,058
VS-GB100TH120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 1136W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.45nF @ 20V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock6,066
VS-GB100TP120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A 650W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 650W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 7.43nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	In Stock2,718
VS-GB100TP120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 150A 735W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 735W Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 4.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	In Stock5,886
VS-GB100TS120NPBF Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 200A INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: * IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,886
VS-GB100TS60NPBF Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 600V 108A 390W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 108A Power - Max: 390W Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	In Stock8,658
VS-GB100YG120NT Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules OUTPUT & SW MODULES - ECONO IGBT Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 127A Power - Max: 625W Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 100A Current - Collector Cutoff (Max): 80µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ECONO3 4PACK	In Stock2,142
VS-GB150LH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 300A 1389W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1389W Vce(on) (Max) @ Vge, Ic: 1.87V @ 15V, 150A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 10.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock3,006
VS-GB150TH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 300A 1008W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1008W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 11nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock6,822
VS-GB150TH120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 280A 1147W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 280A Power - Max: 1147W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 12.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock7,200
VS-GB150TS60NPBF Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 600V 138A 500W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 138A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	In Stock2,124
VS-GB150YG120NT Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules OUTPUT & SW MODULES - ECONO IGBT Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 182A Power - Max: 892W Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 200A Current - Collector Cutoff (Max): 120µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ECONO3 4PACK	In Stock7,308
VS-GB15XP120KTPBF Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 30A 187W MTP Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Power - Max: 187W Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.95nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	In Stock5,022
VS-GB200LH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 370A 1562W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 370A Power - Max: 1562W Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 100nA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock4,104
VS-GB200NH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 420A 1562W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 420A Power - Max: 1562W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock3,816
VS-GB200TH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 360A 1136W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 360A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 14.9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock2,646
VS-GB200TH120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 330A 1316W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 330A Power - Max: 1316W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 16.9nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock2,250
VS-GB200TS60NPBF Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 600V 209A 781W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 209A Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 2.84V @ 15V, 200A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	In Stock3,546
VS-GB300AH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 620A 2500W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 620A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	In Stock5,670
VS-GB300LH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 500A 1645W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock2,412
VS-GB300NH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 500A 1645W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock4,608
VS-GB300TH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 500A 1645W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock7,650
VS-GB300TH120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 530A 2119W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 530A Power - Max: 2119W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 25.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock2,286
VS-GB400AH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 650A 2500W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 650A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	In Stock2,466
VS-GB400AH120U Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 550A 2841W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 550A Power - Max: 2841W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 33.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	In Stock6,516
VS-GB400TH120N Vishay Semiconductor Diodes Division	Transistors - IGBTs - Modules IGBT 1200V 800A 2604W INT-A-PAK Manufacturer: Vishay Semiconductor Diodes Division Series: - IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 800A Power - Max: 2604W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 32.7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	In Stock7,992

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