Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 2/2164

Part Number	Description	In Stock
2N2918 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,482
2N2919 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock5,904
2N2919 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock5,634
2N2919A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,812
2N2919L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock2,322
2N2919U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock2,088
2N2920 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,500
2N2920 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,508
2N2920A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 30MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,920
2N2920L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 60V 0.03A TO78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock5,958
2N2920U Microsemi	Transistors - Bipolar (BJT) - Arrays PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	In Stock3,600
2N3726 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock5,832
2N3727 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 45V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,030
2N3806 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock8,028
2N3807 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,158
2N3808 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock8,838
2N3809 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,128
2N3810 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,996
2N3810 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock9,192
2N3810A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,266
2N3810L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,264
2N3810U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock5,112
2N3811 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,482
2N3811 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock4,914
2N3811A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,762
2N3811L Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock8,280
2N3811U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.05A TO-78 Manufacturer: Microsemi Corporation Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock6,372
2N3838 Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 40V 0.6A 6 PFLTPK Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-FlatPack Supplier Device Package: 6-Flatpack	In Stock8,244
2N4015 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock7,704
2N4016 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 300MA 60V TO78-6 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,418

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