Transistors

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Records 64,903

Page 1940/2164

Part Number	Description	In Stock
ZVP3306ASTZ Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.16A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock6,768
ZVP3306FTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.09A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V FET Feature: - Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock313,224
ZVP3306FTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.09A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V FET Feature: - Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,300
ZVP3310A Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock12,228
ZVP3310ASTOA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock7,596
ZVP3310ASTOB Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock8,244
ZVP3310ASTZ Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.14A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock8,496
ZVP3310FTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.075A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,600
ZVP3310FTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.075A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,262
ZVP4105A Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 175MA TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock2,178
ZVP4105ASTOA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.175A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock5,940
ZVP4105ASTOB Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.175A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock8,802
ZVP4424A Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock28,860
ZVP4424ASTOA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock8,568
ZVP4424ASTOB Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock5,310
ZVP4424ASTZ Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A TO92-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	In Stock3,258
ZVP4424GTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.48A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock56,724
ZVP4424GTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.48A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock4,734
ZVP4424ZTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.2A SOT89 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock27,432
ZVP4525E6TA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.197A SOT-23-6 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock110,586
ZVP4525E6TC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.197A SOT23-6 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	In Stock3,618
ZVP4525GTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.265A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock73,458
ZVP4525GTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.265A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock4,536
ZVP4525ZTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.205A SOT-89 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 205mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock533,172
ZXM41N10FTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,024
ZXM41N10FTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,912
ZXM61N02FTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.7A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,071,452
ZXM61N02FTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.7A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,426
ZXM61N03FTA Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock794,328
ZXM61N03FTC Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,164

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