Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1841/2164

Part Number	Description	In Stock
STF24N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock13,518
STF24N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single NCHANNEL 600 V 105 MOHM TYP. 22 Manufacturer: STMicroelectronics Series: MDmesh™ M6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,804
STF24N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 16A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,856
STF24NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock3,490
STF24NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 19A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,406
STF25N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 25A TO-220FP Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock20,496
STF25N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A EP TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2-EP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock14,910
STF25N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 19.5A TO220FP Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock22,980
STF25NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock3,078
STF25NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock4,518
STF25NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-220FP Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock3,186
STF260N4F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET Manufacturer: STMicroelectronics Series: STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock3,510
STF26N60DM6 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V 0.110 OHM TYP. 2 Manufacturer: STMicroelectronics Series: MDmesh™ DM6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock7,332
STF26N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock21,996
STF26NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220F Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock14,886
STF26NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO220FP Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock5,166
STF26NM60N-H STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,426
STF27N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2-EP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock12,138
STF28N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,264
STF28N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock19,272
STF28N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock23,712
STF28NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock4,176
STF28NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23A TO220FP Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock17,508
STF2HNK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock18,606
STF2LN60K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 2A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock17,388
STF2N62K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 2.2A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock17,352
STF2N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2A TO220FP Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,478
STF2N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 2A TO220FP Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock24,318
STF2NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.4A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock17,004
STF30N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO-220FP Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock14,400

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