Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1819/2164

Part Number	Description	In Stock
STB200N6F3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A D2PAK Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,376
STB200NF03T4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 120A D2PAK Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,966
STB200NF04-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A I2PAK Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 310W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,286
STB200NF04L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,802
STB200NF04L-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A I2PAK Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,778
STB200NF04T4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 310W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,364
STB20N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ M2-EP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,752
STB20N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 18A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock19,932
STB20N90K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 900 V, 0.24 OHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,916
STB20N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 17.5A D2PAK Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock22,854
STB20NK50ZT4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 17A D2PAK Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,142
STB20NM50-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 20A I2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,822
STB20NM50FDT4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A D2PAK Manufacturer: STMicroelectronics Series: FDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,418
STB20NM50T4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 20A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,210
STB20NM60-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A I2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,724
STB20NM60D STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A D2PAK Manufacturer: STMicroelectronics Series: FDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock20,424
STB20NM60T4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,816
STB21N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 17A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,218
STB21N90K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 18.5A D2PAK Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,430
STB21NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 17A D2PAK Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,744
STB21NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,744
STB21NM50N-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18A I2PAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock15,360
STB21NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,942
STB21NM60N-1 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A I2PAK Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,768
STB21NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A D2PAK Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock18,312
STB22N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 600 V, 105 MOHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ M6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,940
STB22NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A D2PAK Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock29,664
STB22NS25ZT4 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 22A D2PAK Manufacturer: STMicroelectronics Series: MESH OVERLAY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V FET Feature: - Power Dissipation (Max): 135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,364
STB230NH03L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,982
STB23N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 16A Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock14,958

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