Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1728/2164

Part Number	Description	In Stock
SI4411DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,646
SI4411DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,156
SI4412ADY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,858
SI4412ADY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,280
SI4413ADY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock24,576
SI4413ADY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,650
SI4413CDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8-SOIC Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,978
SI4413DDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 8SOIC Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 15V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,910
SI4418DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 2.3A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,730
SI4418DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 2.3A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,904
SI4420BDY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock49,374
SI4420BDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,430
SI4420DY ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,328
SI4420DY Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,820
SI4420DY,518 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V SOT96-1 Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,906
SI4420DYPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,392
SI4420DYTR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,156
SI4420DYTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,066
SI4421DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock135,336
SI4421DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock26,898
SI4423DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 600µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock92,004
SI4423DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 600µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,892
SI4425BDY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock519,972
SI4425BDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.8A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock26,208
SI4425DDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 19.7A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock660,780
SI4425FDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30-V (D-S) SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): +16V, -20V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,562
SI4426DY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,016
SI4426DY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,876
SI4427BDY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.7A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock21,156
SI4427BDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.7A 8SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock25,770

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