Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1686/2164

Part Number	Description	In Stock
RFP30N06LE ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,418
RFP30P05 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 30A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 20V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock3,816
RFP30P06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 30A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 20V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock8,388
RFP40N10 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,454
RFP45N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V FET Feature: - Power Dissipation (Max): 131W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock4,662
RFP4N100 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 4.3A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock6,012
RFP50N05L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 50A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock6,588
RFP50N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V FET Feature: - Power Dissipation (Max): 131W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock13,824
RFP70N03 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 70A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 20V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock8,784
RFP70N06 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 70A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock46,662
RFP8P05 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 8A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock7,020
RHK003N06FRAT146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (AEC-Q101 QU Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock28,956
RHK003N06T146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-346 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,156
RHK005N03FRAT146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (AEC-Q101 QU Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,700
RHK005N03T146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 500MA SOT-346 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock22,884
RHP020N06T100 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A SOT-89 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	In Stock23,796
RHP030N03T100 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3A SOT-89 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	In Stock21,294
RHU002N06FRAT106 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (AEC-Q101 QU Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	In Stock24,744
RHU002N06T106 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT-323 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	In Stock69,120
RHU003N03FRAT106 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 4V DRIVE NCH MOSFET (CORRESPONDS Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V FET Feature: - Power Dissipation (Max): 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	In Stock3,240
RHU003N03T106 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 300MA SOT-323 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	In Stock4,968
RJ1G08CGNTLL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RJ1G08CGN IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 20V FET Feature: - Power Dissipation (Max): 78W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTL Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,552
RJ1G12BGNTLL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RJ1G12BGN IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V FET Feature: - Power Dissipation (Max): 178W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTL Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,264
RJ1L08CGNTLL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RJ1G08CGN IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 30V FET Feature: - Power Dissipation (Max): 96W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTL Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,562
RJ1P12BBDTLL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RJ1P12BBD IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 50V FET Feature: - Power Dissipation (Max): 178W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTL Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock13,524
RJ1U330AAFRGTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 250V/33A POWER MOSFET Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 211W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,510
RJJ0318DSP-WS#J5 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8SOP Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2W Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,556
RJK005N03FRAT146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 2.5V DRIVE NCH MOSFET (AEC-Q101 Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock25,092
RJK005N03T146 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 500MA SOT-346 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,346
RJK0301DPB-02#J0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A 5-LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	In Stock2,934

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