Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1671/2164

Part Number	Description	In Stock
PSMN4R5-40BS,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2683pF @ 20V FET Feature: - Power Dissipation (Max): 148W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock18,438
PSMN4R5-40PS,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2683pF @ 12V FET Feature: - Power Dissipation (Max): 148W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock68,238
PSMN4R6-100XS,127 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70.4A TO-220F Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V FET Feature: - Power Dissipation (Max): 63.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock7,542
PSMN4R6-60BS,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4426pF @ 30V FET Feature: - Power Dissipation (Max): 211W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock53,952
PSMN4R6-60PS,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4426pF @ 30V FET Feature: - Power Dissipation (Max): 211W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock126,372
PSMN4R8-100BSEJ Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 50V FET Feature: - Power Dissipation (Max): 405W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock16,410
PSMN4R8-100PSEQ Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 50V FET Feature: - Power Dissipation (Max): 405W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock30,336
PSMN5R0-100ES,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A I2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V FET Feature: - Power Dissipation (Max): 338W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock29,046
PSMN5R0-100PS,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V FET Feature: - Power Dissipation (Max): 338W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock28,986
PSMN5R0-100XS,127 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 67.5A TO-220F Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V FET Feature: - Power Dissipation (Max): 63.8W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock4,356
PSMN5R0-30YL,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 91A LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 12V FET Feature: - Power Dissipation (Max): 61W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock53,670
PSMN5R0-80BS,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6793pF @ 40V FET Feature: - Power Dissipation (Max): 270W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,658
PSMN5R0-80PS,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6793pF @ 12V FET Feature: - Power Dissipation (Max): 270W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock54,318
PSMN5R2-60YLX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V LFPAK56 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39.4nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6319pF @ 25V FET Feature: - Power Dissipation (Max): 195W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock30,000
PSMN5R3-25MLDX Nexperia	Transistors - FETs, MOSFETs - Single PSMN5R3-25MLD/MLFPAK/REEL 7 Q Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 858pF @ 12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 51W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33	In Stock4,968
PSMN5R4-25YLDX Nexperia	Transistors - FETs, MOSFETs - Single PSMN5R4-25YLD/LFPAK/REEL 7 Q1 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 858pF @ 12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 47W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock14,916
PSMN5R5-60YS,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock689,226
PSMN5R6-100BS,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V FET Feature: - Power Dissipation (Max): 306W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock29,052
PSMN5R6-100PS,127 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220AB Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V FET Feature: - Power Dissipation (Max): 306W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock282,636
PSMN5R6-100XS,127 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 61.8A TO220F Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock3,708
PSMN5R6-100YSFQ Nexperia	Transistors - FETs, MOSFETs - Single PSMN5R6-100YSF/SOT1023/4 LEADS Manufacturer: Nexperia USA Inc. Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,916
PSMN5R6-100YSFX Nexperia	Transistors - FETs, MOSFETs - Single PSMN5R6-100YSF/SOT1023/4 LEADS Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 158A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 294W Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	In Stock6,804
PSMN5R6-60YLX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V LFPAK56 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5026pF @ 25V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock57,018
PSMN5R8-30LL,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V QFN3333 Manufacturer: NXP USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1316pF @ 15V FET Feature: - Power Dissipation (Max): 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	In Stock2,916
PSMN5R8-40YS,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1703pF @ 20V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock336,750
PSMN5R9-30YL,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 78A LFPAK Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1226pF @ 15V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock3,472
PSMN6R0-25YLB,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1099pF @ 12V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock15,456
PSMN6R0-25YLDX Nexperia	Transistors - FETs, MOSFETs - Single PSMN6R0-25YLD/LFPAK/REEL 7 Q1 Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock8,244
PSMN6R0-30YL,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 79A LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V FET Feature: - Power Dissipation (Max): 55W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock7,830
PSMN6R0-30YLB,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V LFPAK Manufacturer: Nexperia USA Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1088pF @ 15V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	In Stock2,556

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