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Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
PMN25ENEX
PMN25ENEX

Nexperia

Transistors - FETs, MOSFETs - Single

PMN25ENE/SOT457/SC-74

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 597pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
In Stock3,762
PMN25UN,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 6A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock8,946
PMN27UN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.7A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock6,948
PMN27UP,115
PMN27UP,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock2,286
PMN27UPH
PMN27UPH

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,762
PMN27XPE,115
PMN27XPE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.4A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock5,346
PMN27XPEAX
PMN27XPEAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.4A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,410
PMN28UN,135
PMN28UN,135

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 5.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock2,988
PMN28UN,165

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 5.7A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,078
PMN28UNEX
PMN28UNEX

Nexperia

Transistors - FETs, MOSFETs - Single

PMN28UNE/SOT457/SC-74

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 570mW (Ta), 6.25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
In Stock2,844
PMN30UNEX
PMN30UNEX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 4.8A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 558pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,266
PMN30UNX
PMN30UNX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.5A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock92,676
PMN30XPX
PMN30XPX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5.2A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock86,700
PMN34LN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.7A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock5,454
PMN34UN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.9A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,950
PMN34UP,115
PMN34UP,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,744
PMN35EN,115

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.1A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,734
PMN35EN,125
PMN35EN,125

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock6,354
PMN38EN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.4A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock2,970
PMN38EN,165

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.4A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock7,524
PMN40ENEX
PMN40ENEX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,806
PMN40LN,135

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.4A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,960
PMN40UPE,115
PMN40UPE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,600
PMN40UPEAX
PMN40UPEAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock6,912
PMN42XPE,115
PMN42XPE,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock3,078
PMN42XPEAH
PMN42XPEAH

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 5.7A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock113,802
PMN42XPEAX
PMN42XPEAX

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock2,232
PMN45EN,135
PMN45EN,135

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.2A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Vgs (Max): 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock4,194
PMN45EN,165

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.2A 6TSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Vgs (Max): 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock6,876
PMN48XP,115
PMN48XP,115

Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
In Stock2,124