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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
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2N2945A
2N2945A

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock282
2N2945AUB
2N2945AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 20V 0.1A

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock3,798
2N2946A
2N2946A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 35V 0.1A TO-46

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-46-3
  • Supplier Device Package: TO-46-3
In Stock3,060
2N2946AUB
2N2946AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 35V 0.1A

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock8,604
2N3013
2N3013

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN HS MED PWR SWITCH

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 300nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
  • Power - Max: 360mW
  • Frequency - Transition: 350MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock4,410
2N3014
2N3014

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN HS MED PWR SWITCH

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 300nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
  • Power - Max: 300mW
  • Frequency - Transition: 350MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AC, TO-52-3 Metal Can
  • Supplier Device Package: TO-52-3
In Stock3,024
2N3019
2N3019

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-39

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock4,680
2N3019
2N3019

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS NPN SMALL SIGNAL 80V

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock8,586
2N3019
2N3019

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock4,824
2N3019
2N3019

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock7,356
2N3019S
2N3019S

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock5,094
2N3053
2N3053

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 0.7A TO-39

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 5W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock13,290
2N3053A
2N3053A

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 5W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock5,130
2N3055
2N3055

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO-3

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock4,194
2N3055
2N3055

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock4,536
2N3055AG
2N3055AG

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
  • Power - Max: 115W
  • Frequency - Transition: 6MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock18,720
2N3055G
2N3055G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock42,186
2N3055H
2N3055H

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock7,506
2N3055HG
2N3055HG

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 15A TO-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock5,274
2N3057A
2N3057A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 1A TO-46

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
In Stock7,092
2N3108
2N3108

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN SS AMP 5W TRANSISTOR

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA,1V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock3,420
2N3117
2N3117

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS NPN SMALL SIGNAL 60V

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,328
2N3117
2N3117

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 0.05A TO-18

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10µA, 5V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock13,998
2N3250
2N3250

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 0.2A TO-18

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock20,076
2N3250A
2N3250A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A TO18

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock7,488
2N3251A
2N3251A

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS PNP SMALL SIGNAL 60V

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock2,646
2N3251A
2N3251A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock2,682
2N3251AUB
2N3251AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 60V 0.2A

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock5,256
2N3253
2N3253

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 75V 500NA TO39

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 1V
  • Power - Max: -
  • Frequency - Transition: 175MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock5,760
2N327A
2N327A

Microsemi

Transistors - Bipolar (BJT) - Single

NPN POWER SILICON TRANSISTORS

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock2,916