Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1580/2164

Part Number	Description	In Stock
NP90N04MUK-S18-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	In Stock5,292
NP90N04NUK-S18-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Full Pack, I²Pak	In Stock8,568
NP90N04VUG-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-252 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,928
NP90N04VUK-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,118
NP90N055MUK-S18-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack	In Stock8,730
NP90N055NUK-S18-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Full Pack, I²Pak	In Stock2,070
NP90N055VUK-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 90A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.85mOhm @ 45A, 5V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,934
NP90N06VLG-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A TO-252 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,340
NP95N03ZUGP-E1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,416
NSTR4501NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.2A SOT23-3 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,148
NTA4001NT1 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.238A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 238mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock3,690
NTA4001NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.238A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 238mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock315,702
NTA4151PT1 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.76A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V FET Feature: - Power Dissipation (Max): 301mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock7,452
NTA4151PT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.76A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V FET Feature: - Power Dissipation (Max): 301mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock657,678
NTA4151PT1H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.76A SC75 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V FET Feature: - Power Dissipation (Max): 301mW (Tj) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock29,586
NTA4153NT1 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 915MA SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock4,698
NTA4153NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 915MA SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock1,102,116
NTA4153NT3G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 915MA SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock74,982
NTA7002NT1 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.154A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock4,950
NTA7002NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.154A SOT-416 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V FET Feature: - Power Dissipation (Max): 300mW (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	In Stock2,178,084
NTAT6H406NT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single NCH 80V 175A 2.9MOHM Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 175A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8040pF @ 40V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,302
NTB082N65S3F ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V D2PAK PKG Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 400V FET Feature: - Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,668
NTB095N65S3HF ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V FRFET,95MO Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 860µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 400V FET Feature: - Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK-3 (TO-263-3) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,420
NTB110N65S3HF ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V FRFET,110M Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 400V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK-3 (TO-263-3) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,484
NTB125N02R ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 15.9A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,402
NTB125N02RG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 15.9A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,590
NTB125N02RT4 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 15.9A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,194
NTB125N02RT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 15.9A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,628
NTB13N10 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 64.7W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,770
NTB13N10G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 64.7W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,640

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