Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 1552/2164

Part Number	Description	In Stock
IXTV30N60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A PLUS220 Manufacturer: IXYS Series: PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock2,196
IXTV30N60PS IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A PLUS220-SMD Manufacturer: IXYS Series: PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	In Stock3,492
IXTV36N50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220 Manufacturer: IXYS Series: PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock7,632
IXTV36N50PS IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220-SMD Manufacturer: IXYS Series: PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	In Stock4,518
IXTV60N30T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 60A PLUS220 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock3,168
IXTV72N30T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 72A PLUS220 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock8,082
IXTV96N25T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 96A PLUS220 Manufacturer: IXYS Series: TrenchHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock3,618
IXTV98N20T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 98A PLUS220 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	In Stock2,124
IXTX102N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 102A X2 PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,180
IXTX110N20L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 110A PLUS247 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,830
IXTX120N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 120A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,300
IXTX120P20T IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 120A PLUS247 Manufacturer: IXYS Series: TrenchP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,232
IXTX170P10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 170A PLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,084
IXTX17N120L IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 17A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,074
IXTX1R4N450HV IXYS	Transistors - FETs, MOSFETs - Single 2500V TO 4500V VERY HI VOLT PWR Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247PLUS-HV Package / Case: TO-247-3 Variant	In Stock8,514
IXTX200N10L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 200A PLUS247 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,754
IXTX20N150 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 20A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock201
IXTX210P10T IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 210A PLUS247 Manufacturer: IXYS Series: TrenchP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 69500pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,250
IXTX22N100L IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 22A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,740
IXTX240N075L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,798
IXTX24N100 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V FET Feature: - Power Dissipation (Max): 568W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,834
IXTX32P60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 600V 32A PLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,258
IXTX400N15X4 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 400A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V FET Feature: - Power Dissipation (Max): 1500W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™ Package / Case: TO-247-3	In Stock8,496
IXTX40P50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 40A PLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,200
IXTX46N50L IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 46A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock4,212
IXTX4N300P3HV IXYS	Transistors - FETs, MOSFETs - Single 2000V TO 3000V POLAR3 POWER MOSF Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247PLUS-HV Package / Case: TO-247-3 Variant	In Stock7,224
IXTX550N055T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 550A PLUS247 Manufacturer: IXYS Series: FRFET®, SupreMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,012
IXTX5N250 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 2500V 5A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock8,316
IXTX600N04T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 600A PLUS247 Manufacturer: IXYS Series: FRFET®, SupreMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,106
IXTX60N50L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 60A PLUS247 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock4,932

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