Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1469/2164

Part Number	Description	In Stock
IRLMS2002TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	In Stock237,978
IRLMS4502TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 5.5A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(TSOP-6) Package / Case: SOT-23-6	In Stock8,442
IRLMS5703TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.3A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	In Stock4,950
IRLMS5703TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(TSOP-6) Package / Case: SOT-23-6	In Stock2,142
IRLMS6702TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.4A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	In Stock7,560
IRLMS6702TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.4A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(TSOP-6) Package / Case: SOT-23-6	In Stock27,468
IRLMS6802TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.6A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	In Stock7,146
IRLMS6802TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.6A 6-TSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6™(TSOP-6) Package / Case: SOT-23-6	In Stock27,108
IRLP3034PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 195A TO-247AC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V FET Feature: - Power Dissipation (Max): 341W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock9,540
IRLR014 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock21,450
IRLR014NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,644
IRLR014NTR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,274
IRLR014NTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,082
IRLR014NTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,838
IRLR014NTRR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,956
IRLR014PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock20,088
IRLR014TR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,238
IRLR014TRL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,142
IRLR014TRLPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,600
IRLR014TRPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,352
IRLR014TRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,806
IRLR024 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,614
IRLR024NPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,506
IRLR024NTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,902
IRLR024NTRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,480
IRLR024NTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock29,418
IRLR024NTRR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,068
IRLR024NTRRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,100
IRLR024PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V FET Feature: - Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock22,320
IRLR024TR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,978

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