Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1397/2164

Part Number	Description	In Stock
IRFD220PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 800MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock15,690
IRFD224 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 630MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock8,838
IRFD224PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 630MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock23,130
IRFD310 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 350MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 210mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock7,830
IRFD310PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 350MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 210mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock21,528
IRFD320 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 490MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock4,680
IRFD320PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 490MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,720
IRFD420 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 370MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,030
IRFD420PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 370MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock25,326
IRFD9010 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 1.1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,634
IRFD9010PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 1.1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock32,106
IRFD9014 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 660mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,454
IRFD9014PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 660mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock14,394
IRFD9020 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V Vgs(th) (Max) @ Id: 4V @ 1µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,552
IRFD9020PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V Vgs(th) (Max) @ Id: 4V @ 1µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock26,370
IRFD9024 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock2,772
IRFD9024PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.6A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock18,552
IRFD9110 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.7A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,552
IRFD9110PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.7A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock12,828
IRFD9113 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 600MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 15V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,436
IRFD9120 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock3,582
IRFD9120PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock23,904
IRFD9123 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,292
IRFD9123PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A HEXDIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,912
IRFD9210 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.4A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock6,012
IRFD9210PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.4A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock15,336
IRFD9220 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.56A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 560mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,004
IRFD9220PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.56A 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 560mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock14,016
IRFDC20 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 320MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock5,058
IRFDC20PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 320MA 4-DIP Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	In Stock17,436

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