Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1379/2164

Part Number	Description	In Stock
IRF8010STRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 80A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V FET Feature: - Power Dissipation (Max): 260W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,186
IRF8010STRRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 80A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V FET Feature: - Power Dissipation (Max): 260W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,946
IRF8113 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,212
IRF8113GPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,858
IRF8113GTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,514
IRF8113PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,346
IRF8113TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,110
IRF8113TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,698
IRF820 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-220AB Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,886
IRF820 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4A TO-220 Manufacturer: STMicroelectronics Series: PowerMESH™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,748
IRF820A Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-220AB Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,148
IRF820AL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-262 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,676
IRF820ALPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-262 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,994
IRF820APBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-220AB Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock23,688
IRF820AS Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,544
IRF820ASPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock13,644
IRF820ASTRL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,508
IRF820ASTRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,688
IRF820L Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-262 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,392
IRF820LPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-262 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,676
IRF820PBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-220AB Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,832
IRF820S Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,712
IRF820SPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock15,876
IRF820STRL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,860
IRF820STRLPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock16,392
IRF820STRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,978
IRF820STRRPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,884
IRF8252PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 25A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,696
IRF8252TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 25A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,736
IRF8252TRPBF-1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 25A Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,772

«
‹
1
...
1376
1377
1378
1379 (current)
1380
1381
1382
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message