Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 114/2164

Part Number	Description	In Stock
AT-64000-GP4 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V BIPOLAR CHIP Manufacturer: Broadcom Limited Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: -	In Stock7,092
AT-64020 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 200SMD Manufacturer: Broadcom Limited Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (200 mil BeO) Supplier Device Package: -	In Stock2,214
AT-64023 Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 230 MIL BE0 Manufacturer: Broadcom Limited Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (230 mil BeO) Supplier Device Package: 230 mil Be0	In Stock7,416
BF199 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock3,060
BF199_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock3,258
BF199_J35Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock7,380
BF240 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock7,243
BF240,112 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 150MHZ TO92-3 Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock5,652
BF240_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock2,592
BF240_J35Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock5,400
BF240_ND74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 1.1GHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock8,694
BF494 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock4,266
BF494_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock2,160
BF494_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock2,106
BF 770A E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9.5dB ~ 14.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock5,328
BF771E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock5,724
BF 775 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock3,294
BF776E6327FTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343-4 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock7,992
BF776H6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343-4 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	In Stock24,888
BF799E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT23-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock8,964
BF799WE6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock2,538
BF799WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 800MHZ SOT323-3 Manufacturer: Infineon Technologies Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock3,348
BF959 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock7,650
BF959G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock4,896
BF959RL1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock5,544
BF959RL1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock2,124
BF959ZL1 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock7,434
BF959ZL1G ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 700MHZ TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock7,650
BFG10,215 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 8V 1.9GHZ SOT143B Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	In Stock7,434
BFG10W/X,115 NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 1.9GHZ 4SO Manufacturer: NXP USA Inc. Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	In Stock4,788

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