Transistors

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Records 64,903

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Part Number	Description	In Stock
DMN6066SSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3.7A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock24,522
DMN6068LK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6A DPAK Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V FET Feature: - Power Dissipation (Max): 2.12W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock295,188
DMN6068LK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V 60V TO252 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,510
DMN6068SE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.1A SOT223 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock613,746
DMN6069SE-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETN-CH 60VSOT223 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock2,811
DMN6069SFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.6A POWERDI333 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V FET Feature: - Power Dissipation (Max): 930mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock3,474
DMN6069SFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.6A POWERDI333 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V FET Feature: - Power Dissipation (Max): 930mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock8,100
DMN6069SFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A POWERDI3333 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V FET Feature: - Power Dissipation (Max): 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock8,046
DMN6069SFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A POWERDI3333 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V FET Feature: - Power Dissipation (Max): 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	In Stock6,498
DMN6070SFCL-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3A 6-DFN Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 606pF @ 20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1616-6 (Type E) Package / Case: 6-PowerUFDFN	In Stock8,640
DMN6070SY-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.1A SOT89-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock4,950
DMN6075S-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 606pF @ 20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,718
DMN6075S-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 606pF @ 20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,182
DMN60H080DS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 80MA SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,664
DMN60H080DS-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 80MA SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock101,148
DMN60H3D5SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.8A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V FET Feature: - Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,824
DMN60H4D5SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.5A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 273.5pF @ 25V FET Feature: - Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,046
DMN6140L-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,194,084
DMN6140L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT-23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,902
DMN6140LQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,780
DMN6140LQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 40V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock53,004
DMN61D8L-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.47A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V FET Feature: - Power Dissipation (Max): 390mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,212
DMN61D8L-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.47A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V FET Feature: - Power Dissipation (Max): 390mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock58,038
DMN61D8LQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V FET Feature: - Power Dissipation (Max): 390mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,896
DMN61D8LQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V FET Feature: - Power Dissipation (Max): 390mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,424
DMN61D9U-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V FET Feature: - Power Dissipation (Max): 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,508
DMN61D9U-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V FET Feature: - Power Dissipation (Max): 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock276,408
DMN61D9UW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.34A SOT323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock3,744
DMN61D9UW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.34A Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock52,872
DMN61D9UWQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 400MA SOT323 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V FET Feature: - Power Dissipation (Max): 440mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	In Stock82,560

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