Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1109/2164

Part Number	Description	In Stock
CSD25485F5 Texas Instruments	Transistors - FETs, MOSFETs - Single 20V P-CHANNEL FEMTOFET Manufacturer: Series: FemtoFET™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Vgs (Max): -12V Input Capacitance (Ciss) (Max) @ Vds: 533pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	In Stock142,122
CSD25485F5T Texas Instruments	Transistors - FETs, MOSFETs - Single CSD25485F5T Manufacturer: Series: FemtoFET™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Vgs (Max): -12V Input Capacitance (Ciss) (Max) @ Vds: 533pF @ 10V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	In Stock52,410
CSD25501F3 Texas Instruments	Transistors - FETs, MOSFETs - Single 20V P CH MOSFET Manufacturer: Series: FemtoFET™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.33nC @ 4.5V Vgs (Max): -20V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-LGA (0.73x0.64) Package / Case: 3-XFLGA	In Stock6,426
CSD25501F3T Texas Instruments	Transistors - FETs, MOSFETs - Single 20-V P-CHANNEL FEMTOFET MOSFET Manufacturer: Series: FemtoFET™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.33nC @ 4.5V Vgs (Max): -20V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-LGA (0.73x0.64) Package / Case: 3-XFLGA	In Stock28,242
CTLDM3590 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.16A TLM3D6D8 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V FET Feature: - Power Dissipation (Max): 125mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM3D6D8 Package / Case: 3-XFDFN	In Stock2,574
CTLDM7002A-M621 BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock3,042
CTLDM7002A-M621 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock6,444
CTLDM7003-M621 BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.764nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock7,758
CTLDM7003-M621 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.764nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock8,874
CTLDM7120-M621H BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock5,436
CTLDM7120-M621H TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1A Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock6,048
CTLDM7590 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.14A TLM3D6D8 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V FET Feature: - Power Dissipation (Max): 125mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM3D6D8 Package / Case: 3-XFDFN	In Stock2,100
CTLDM8002A-M621 BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock2,484
CTLDM8002A-M621H BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock3,528
CTLDM8002A-M621H TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock4,644
CTLDM8002A-M621 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621 Package / Case: 6-PowerVFDFN	In Stock3,276
CTLDM8120-M621H BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock6,804
CTLDM8120-M621H TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V DFN6 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	In Stock4,266
CWDM3011N TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8SOIC Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,982
CWDM3011P TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A 8SOIC Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,536
CWDM305N TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A 8SOIC Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,430
CWDM305P TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 16V 5.3A 8SOIC Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,516
CXDM1002N TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2A SOT-89 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock22,158
CXDM3069N TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.9A SOT-89 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock6,336
CXDM4060N TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 6A SOT-89 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock13,902
CXDM4060P TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6A SOT-89 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock14,340
CXDM6053N TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.3A SOT-89 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 30V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock8,766
CZDM1003N BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3A SOT-223 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,208
CZDM1003N TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3A SOT-223 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,172
DI9400T Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.4A 8-SOP Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SMD, Gull Wing	In Stock3,042

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