Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
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Transistors - Special Purpose (162)

Records 64,903

Page 1078/2164

Part Number	Description	In Stock
BUK7620-55A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 54A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1592pF @ 25V FET Feature: - Power Dissipation (Max): 118W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,484
BUK7623-75A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 53A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V FET Feature: - Power Dissipation (Max): 138W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock36,468
BUK7624-55,118 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 45A D2PAK Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 103W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,104
BUK7624-55A,118 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 47A D2PAK Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V FET Feature: - Power Dissipation (Max): 106W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,114
BUK7626-100B,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 49A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2891pF @ 25V FET Feature: - Power Dissipation (Max): 157W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,974
BUK7628-100A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 47A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V FET Feature: - Power Dissipation (Max): 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,916
BUK7628-100A/C,118 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V FET Feature: - Power Dissipation (Max): 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,174
BUK7628-55A,118 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A D2PAK Manufacturer: NXP USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 25V FET Feature: - Power Dissipation (Max): 99W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,316
BUK762R0-40C,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V FET Feature: - Power Dissipation (Max): 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock32,676
BUK762R0-40E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V FET Feature: - Power Dissipation (Max): 293W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,984
BUK762R4-60E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,004
BUK762R6-40E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7130pF @ 25V FET Feature: - Power Dissipation (Max): 263W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock38,538
BUK762R6-60E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10170pF @ 25V FET Feature: - Power Dissipation (Max): 324W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,320
BUK762R7-30B,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6212pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,802
BUK762R9-40E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V FET Feature: - Power Dissipation (Max): 234W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock24,858
BUK7631-100E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,754
BUK7635-100A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 41A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 25V FET Feature: - Power Dissipation (Max): 149W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock35,502
BUK7635-55A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 35A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock28,488
BUK763R1-40B,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock32,796
BUK763R1-60E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V FET Feature: - Power Dissipation (Max): 293W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock38,664
BUK763R4-30B,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 25V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,760
BUK763R6-40C,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5708pF @ 25V FET Feature: - Power Dissipation (Max): 203W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,002
BUK763R8-80E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12030pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock23,202
BUK763R9-60E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V FET Feature: - Power Dissipation (Max): 263W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock28,728
BUK7640-100A,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 37A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2293pF @ 25V FET Feature: - Power Dissipation (Max): 138W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,156
BUK764R0-40E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4405pF @ 25V FET Feature: - Power Dissipation (Max): 182W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,394
BUK764R0-55B,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6776pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock25,938
BUK764R0-75C,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11659pF @ 25V FET Feature: - Power Dissipation (Max): 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock203,874
BUK764R2-80E,118 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A D2PAK Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10426pF @ 25V FET Feature: - Power Dissipation (Max): 324W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,776
BUK764R3-40B,118 NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4824pF @ 25V FET Feature: - Power Dissipation (Max): 254W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,222

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