Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1034/2164

Part Number	Description	In Stock
AUIRF7734M2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 17A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2545pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET™ M2 Package / Case: DirectFET™ Isometric M2	In Stock8,694
AUIRF7736M2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 179A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4267pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET™ M4 Package / Case: DirectFET™ Isometric M4	In Stock6,210
AUIRF7737L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 315A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L6 Package / Case: DirectFET™ Isometric L6	In Stock8,406
AUIRF7738L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 315A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 109A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7471pF @ 25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L6 Package / Case: DirectFET™ Isometric L6	In Stock7,434
AUIRF7739L2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 46A DIRECTFET2 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock7,704
AUIRF7739L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 375A DIRECTFET2 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock6,948
AUIRF7749L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 36A DIRECTFET Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): 60V Input Capacitance (Ciss) (Max) @ Vds: 10655pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock30,480
AUIRF7759L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock3,906
AUIRF7769L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 375A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock7,092
AUIRF7799L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 35A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock3,024
AUIRF7805Q Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 13A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,642
AUIRF7805QTR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 13A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,362
AUIRF8736M2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 137A AUTO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6867pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET™ M4 Package / Case: DirectFET™ Isometric M4	In Stock8,046
AUIRF8739L2TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 545A AUTO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 17890pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET™ Isometric L8	In Stock8,874
AUIRF9540N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 23A TO-220AB Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock4,662
AUIRF9Z34N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V FET Feature: - Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock17,112
AUIRFB3207 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,506
AUIRFB3806 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 43A TO-220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,208
AUIRFB4410 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 75A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,696
AUIRFB4610 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 73A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,586
AUIRFB8405 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V FET Feature: - Power Dissipation (Max): 163W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock151,546
AUIRFB8407 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 195A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,250
AUIRFB8409 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 195A TO220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,780
AUIRFBA1405 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 55V 95A SUPER-220 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 101A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220™ (TO-273AA) Package / Case: TO-273AA	In Stock5,256
AUIRFL014N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 1.5A SOT-223 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,424
AUIRFL014NTR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 1.5A SOT-223 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock7,614
AUIRFL024N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2.8A SOT-223 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock8,946
AUIRFL024NTR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2.8A SOT-223 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock6,894
AUIRFN7107TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3001pF @ 25V FET Feature: - Power Dissipation (Max): 4.4W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,102
AUIRFN7110TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 58A PQFN Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock7,524

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