PMIC - Gate Drivers
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CategorySemiconductors / Power Management ICs / PMIC - Gate Drivers
Records 5,436
Page 81/182
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
IC GATE DRIVER DUAL 2A 8-SOIC |
7,938 |
|
Automotive, AEC-Q100 | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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STMicroelectronics |
IC DRVR HALF BRG HV OSC 8MINIDIP |
7,074 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 16.6V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-Mini DIP |
|
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|
Texas Instruments |
IC MOSFET DRIVER DUAL 5A 8-SOIC |
3,492 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5V ~ 14V | 0.8V, 2.2V | 3A, 5A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Analog Devices |
IC MOSFET DVR 4A DUAL HS 8MSOP |
2,160 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 4A, 4A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MiniSOIC-EP |
|
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|
Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8MSOP |
7,542 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8MSOP |
8,028 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
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|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8MSOP |
2,664 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
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|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8MSOP |
3,024 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
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|
ON Semiconductor |
IC GATE DRIVER HI SIDE 8-SOIC |
3,474 |
|
Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 250mA, 500mA | Inverting | 600V | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC |
2,718 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Renesas Electronics America Inc. |
IC MOSFET DVR STP-DN SYNC 10DFN |
8,100 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 7.5V | 1.7V, 3.4V | 3.2A, 3.2A | Non-Inverting | 30V | 5.3ns, 4.8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
|
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|
Renesas Electronics America Inc. |
IC MOSFET DVR STP-DN SYNC 10DFN |
5,256 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 7.5V | 1.7V, 3.4V | 3.2A, 3.2A | Non-Inverting | 30V | 5.3ns, 4.8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
|
|
|
Renesas Electronics America Inc. |
IC DRVR HALF BRIDGE 60V 8-DFN |
7,452 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 14V | 1.63V, 2.06V | 1A, 1A | Non-Inverting | 60V | 8ns, 2ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
|
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|
Diodes Incorporated |
IC GATE DRVR HIGH-SIDE 8SO |
8,226 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Diodes Incorporated |
IC GATE DRVR HIGH-SIDE 8SO |
8,334 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Infineon Technologies |
IS REG CTRLR FLYBCK PWM 8SOIC |
3,366 |
|
Advanced Smart Rectifier™ | Low-Side | Single | 1 | N-Channel MOSFET | 11V ~ 19V | 2V, 2.25V | 1A, 4A | Inverting | - | 20ns, 10ns | -25°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-QFN |
6,516 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 1V, 2V | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-QFN (3x3) |
|
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|
Microchip Technology |
IC MOSFET DVR 28V HALF 16QFN |
4,680 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 28V | 0.65V, 1.4V | - | Non-Inverting | - | 15ns, 13.5ns | -40°C ~ 125°C (TJ) | Surface Mount, Wettable Flank | 16-VFQFN Exposed Pad | 16-VQFN (3x3) |
|
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Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8DIP |
4,734 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Microchip Technology |
IC MOSFET DVR 1A HS INV 8DIP |
3,168 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Infineon Technologies |
IC DVR HALF BRDG SELF-OSC 8-DIP |
8,190 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15.6V | - | - | RC Input Circuit | 600V | 80ns, 45ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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|
IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV |
4,068 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
IXYS Integrated Circuits Division |
2A 8 SOIC EXP METAL DUAL INVERT |
4,878 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-DIP |
3,258 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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|
Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
8,190 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 1A, 1A | Non-Inverting | 118V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Texas Instruments |
IC DVR HALF-BRDG 100V 1A 8-EMSOP |
5,688 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 1A, 1A | Non-Inverting | 118V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
|
Texas Instruments |
IC GATE DRVR 6SON |
8,586 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 18V | 1.3V, 1.85V | 4A, 6A | Inverting, Non-Inverting | - | 5ns, 5ns | -40°C ~ 140°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) |
|
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|
ON Semiconductor |
IC GATE DVR HI SIDE RESET 8-SOIC |
6,822 |
|
Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 200mA, 400mA | Non-Inverting | 600V | 200ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
7,362 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Infineon Technologies |
IC DVR HALF BRIDGE 8-DIP |
7,524 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |