PMIC - Gate Drivers
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CategorySemiconductors / Power Management ICs / PMIC - Gate Drivers
Records 5,436
Page 112/182
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Maxim Integrated |
IC DVR MOSFET QUAD HI-SIDE 18DIP |
5,454 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
7,668 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
|
|
|
IXYS |
IC LOW SIDE DRIVER 16DIP |
8,424 |
|
ISOSMART™ | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 1V, 3.65V | 2A, 2A | Non-Inverting | 1200V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-DIP |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP |
4,896 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP |
3,816 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-DIP |
3,204 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP |
2,682 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP |
5,922 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
|
|
|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
6,012 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP |
5,940 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
|
|
|
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP |
6,084 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
|
|
|
Infineon Technologies |
IC MOSFET DRIVER SGL-CH 8-DIP |
8,622 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC MOSFET DRIVER LIMITING 8-DIP |
3,090 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8-DIP |
6,228 |
|
- | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
79,249 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC |
8,100 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
|
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
4,794 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
|
|
|
Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8-DIP |
8,604 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15.6V | - | - | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 44-PLCC |
4,302 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
|
|
|
Linear Technology/Analog Devices |
IC ISOLATED MOSFET DRIVER 18DIP |
3,744 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
|
Linear Technology/Analog Devices |
5V ISOLATED HI SIDE DX UL RECOG. |
6,876 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 12V 28SOIC |
2,592 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 5V 28-SOIC |
6,786 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
Linear Technology/Analog Devices |
12V ISOLATED HI SIDE DRIVER UL R |
7,596 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
|
Linear Technology/Analog Devices |
5V ISOLATED HI SIDE DX UL RECOG. |
6,588 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 12V 28SOIC |
5,472 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 5V 28-SOIC |
8,730 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR HI-SIDE DUAL 8-DIP |
6,426 |
|
- | High-Side | Independent | 2 | N-Channel MOSFET | 9V ~ 24V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Maxim Integrated |
IC DVR MOSFET DUAL NON-INV 8SOIC |
21,927 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
2,034 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |