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CategorySemiconductors / Memory ICs / Memory
Records 46,590
Page 91/1553
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Memory Type | Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alliance Memory, Inc. |
134-BALL FBGA (10X11.5X1.0) |
6,012 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
|
|
|
Renesas Electronics America |
IC SRAM 4M PARALLEL 44TSOP2 |
1,553 |
|
- | Volatile | SRAM | SRAM | 4Mb (256K x 16) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
|
|
|
Renesas Electronics America |
IC SRAM 4M PARALLEL 44TSOP II |
18,504 |
|
- | Volatile | SRAM | SRAM | 4Mb (256K x 16) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Toshiba Memory America, Inc. |
4GB SLC NAND 24NM BGA 9X11 1.8V |
7,728 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
|
Microchip Technology |
IC FLASH 64M PARALLEL 48TFBGA |
28,090 |
|
SST39 MPF™ | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA |
|
|
|
Cypress Semiconductor |
IC 256 MB FLASH MEMORY |
21,096 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 66MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 60FBGA |
14,976 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 96FBGA |
6,498 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
75,954 |
|
Automotive, AEC-Q100, GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
|
Toshiba Memory America, Inc. |
4GB SLC BENAND 24NM BGA 9X11 (EE |
7,452 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
|
Toshiba Memory America, Inc. |
4G SLC NAND BGA 24NM |
7,272 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | - | - | - | -40°C ~ 85°C | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
|
Toshiba Memory America, Inc. |
4GB SLC NAND 24NM BGA 9X11 1.8V |
7,176 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-BGA | 63-BGA (9x11) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 60FBGA |
9,600 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (64M x 16) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-VFBGA | 60-FBGA (8x9) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 1G PARALLEL 533MHZ |
12,234 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -40°C ~ 85°C (TA) | Surface Mount | 121-WFBGA | 121-VFBGA (8x7.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 60FBGA |
12,264 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M SPI 80MHZ |
14,010 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 80MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Cypress Semiconductor |
IC 256 MB FLASH MEMORY |
31,530 |
|
Automotive, AEC-Q100, FL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 80MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Cypress Semiconductor |
IC SRAM 1M PARALLEL 32SOIC |
6,564 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOIC |
|
|
|
Winbond Electronics |
IC FLASH 4G PARALLEL 63VFBGA |
7,236 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 35ns | 35ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 60VFBGA |
22,392 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (64M x 16) | Parallel | 200MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-VFBGA | 60-VFBGA (8x9) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 90FBGA |
6,756 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TJ) | Surface Mount | 90-VFBGA | 90-FBGA (8x13) |
|
|
|
Alliance Memory, Inc. |
2G DDR3L 128MX16 1.35V 96-FBGA |
7,956 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Insignis Technology Corporation |
DDR3L 4GB X16 FBGA 7.5X13.5(X1.2 |
6,420 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
23,136 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
13,764 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
|
|
Rohm Semiconductor |
FERAM / 2MBIT (256KB X 8) / SPI |
13,440 |
|
- | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 2Mb (256K x 8) | SPI | 34MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Micron Technology Inc. |
IC FLASH 32G PARALLEL 48TSOP I |
13,968 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
ISSI, Integrated Silicon Solution Inc |
2G 1.5V DDR3 128MX16 1866MT 96 B |
7,392 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Cypress Semiconductor |
IC FLASH 1G PARALLEL 64BGA |
15,072 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 90VFBGA |
12,588 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |