Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 83/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A TO220-2 |
48,804 |
|
SWITCHMODE™ | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE RECT 100V 20A TO220FP |
15,282 |
|
- | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FP | 175°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 8A DO214AB |
26,832 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220F |
33,312 |
|
- | Standard | 600V | 9A | 1.26V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F |
24,798 |
|
- | Standard | 600V | 10A | 2.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F |
25,554 |
|
- | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO220AC |
17,184 |
|
- | Schottky | 60V | 7.5A | 750mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
39,852 |
|
SWITCHMODE™ | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 16A TO220-2 |
23,916 |
|
SWITCHMODE™ | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 15A TO220-2 |
218,310 |
|
SWITCHMODE™ | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 8A TO220AC |
52,476 |
|
SWITCHMODE™ | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
35,934 |
|
- | Schottky | 45V | 10A | 800mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2 |
24,246 |
|
SWITCHMODE™ | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 5A TO220FP |
13,152 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 10A TLM364 |
42,012 |
|
- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | 3-SMD, Flat Leads | TLM364 | -65°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2A TO252-2 |
498 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 120pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2A TO220-2 |
34,902 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 120pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A ITO220AC |
17,526 |
|
TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | 200°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 8A D2PAK |
24,174 |
|
- | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 100V 30A SMC |
55,740 |
|
- | Schottky | 100V | 30A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | Z5-T | SMC (Z5-T) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 8A TO220-2 |
43,182 |
|
SWITCHMODE™ | Standard | 1000V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 2A TO252-2 |
37,752 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 120pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2.2A TO220-2 |
47,478 |
|
Zero Recovery™ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 80pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 200V 14A TO220AC |
30,612 |
|
- | Standard | 200V | 14A | 1.05V @ 14A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
15,102 |
|
SWITCHMODE™ | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 10A TO220AC |
13,128 |
|
- | Schottky | 45V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO220AC |
31,920 |
|
- | Standard | 1200V | 8A | 3.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
18,012 |
|
- | Standard | 1200V | 8A | 2.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE RECT 100V 40A TO220AB |
21,420 |
|
- | FERD (Field Effect Rectifier Diode) | 100V | 40A | 705mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 190µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 120V 30A POWRFLAT |
28,980 |
|
- | Schottky | 120V | 30A | 920mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 120V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |