Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 73/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
244,740 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
36,372 |
|
- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A SOD57 |
815,988 |
|
- | Avalanche | 1000V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 1A DO41 |
377,994 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A SOD57 |
372,936 |
|
- | Avalanche | 1000V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
277,506 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
255,024 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
246,510 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
93,138 |
|
SUPERECTIFIER® | Standard | 1300V | 1A | 3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
99,558 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 125V 200MA DO35 |
97,878 |
|
- | Standard | 125V | 200mA | 1.15V @ 300mA | Small Signal =< 200mA (Io), Any Speed | - | 3nA @ 125V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35 |
108,846 |
|
- | Standard | 150V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
76,446 |
|
- | Avalanche | 600V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
96,162 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
58,680 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 12A TO277-3 |
252,696 |
|
Automotive, AEC-Q101 | Schottky | 120V | 12A | 790mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB |
302,280 |
|
- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 50V 3A SMB |
200,088 |
|
- | Standard | 50V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A SOD57 |
195,576 |
|
- | Avalanche | 100V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 750MA SOT23-3 |
160,134 |
|
- | Schottky | 40V | 750mA (DC) | 490mV @ 750mA | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 100µA @ 30V | 25pF @ 25V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 70V 3A SMC |
81,762 |
|
- | Schottky | 70V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 70V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOT23 |
44,514 |
|
- | Standard | 75V | 250mA | 1.1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 500pA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
28,122 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 150V POWERDI123 |
205,680 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 820mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | 28pF @ 5V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 500MA DO204 |
23,904 |
|
SUPERECTIFIER® | Standard | 1200V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 30V 100MA SOT23 |
23,832 |
|
- | Schottky | 30V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DO214AB |
234,276 |
|
- | Standard | 600V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 3A SMC |
38,994 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
211,266 |
|
TMBS® | Schottky | 100V | 1.9A (DC) | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 125V 200MA DO35 |
97,554 |
|
- | Standard | 125V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 125V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |