Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 668/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
DIODE SC SCHOTKY 1200V 15A TO220 |
5,076 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 375µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A A-MELF |
7,398 |
|
- | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
7,848 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
2,430 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
5,436 |
|
- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
6,732 |
|
- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
5,346 |
|
- | Standard | 1200V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 85A DO5 |
7,776 |
|
- | Standard | 1400V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
IXYS |
DIODE AVALANCHE 1.2KV 49A DO203 |
6,660 |
|
- | Avalanche | 1200V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
IXYS |
DIODE GEN PURP 1.2KV 49A DO203AB |
4,932 |
|
- | Standard | 1200V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
2,988 |
|
- | Standard | 600V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
6,372 |
|
- | Standard | 600V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 95A DO5 |
8,478 |
|
- | Standard | 400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5 |
6,786 |
|
- | Standard | 800V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
Microsemi |
DIODE GEN PURP 220V 2A AXIAL |
6,426 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURPOSE |
2,736 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Microsemi |
DIODE GEN PURPOSE |
5,472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 95A DO5 |
7,236 |
|
- | Standard | 400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5 |
3,816 |
|
- | Standard | 800V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 95A DO5 |
4,374 |
|
- | Standard | 1400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 85A DO5 |
6,768 |
|
- | Standard | 1600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
8,766 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
4,212 |
|
Military, MIL-PRF-19500/411 | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 85A DO203AB |
3,834 |
|
- | Standard | 1400V | 85A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
7,236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A DO203AB |
8,820 |
|
- | Standard, Reverse Polarity | 800V | 8A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 95A DO5 |
2,052 |
|
- | Standard | 1400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
Semtech |
.3A ULTRA FAST 100V |
8,460 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Semtech |
.3A ULTRA FAST 75V |
3,726 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Semtech |
.3A ULTRA FAST 115V |
5,508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |