Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 663/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 70A DO5 |
7,146 |
|
- | Standard | 1200V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV 70A DO5 |
7,146 |
|
- | Standard, Reverse Polarity | 1200V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
|
|
|
Semtech |
DIODE STD REC 3A 100V SMD |
5,580 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
209 |
|
Military, MIL-PRF-19500/411 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A AXIAL |
4,716 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 1A AXIAL |
7,182 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 880V 1.4A AXIAL |
6,066 |
|
- | Standard | 880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA |
8,460 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
3,528 |
|
Military, MIL-PRF-19500/424 | Standard | 100V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
D MET 3A STD 400V HR |
1,595 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
8,424 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Semtech |
D MET 3A STD 800V HR |
5,472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1A AXIAL |
7,092 |
|
- | Standard | 1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 1.75A A-MELF |
9,088 |
|
- | Standard | 220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 70A DO5 |
4,500 |
|
- | Standard | 1400V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV 70A DO5 |
6,786 |
|
- | Standard, Reverse Polarity | 1400V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A D5A |
5,616 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE STD REC 3A 200V SMD |
3,204 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA B-MELF |
8,352 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
SCHOTTKY |
4,356 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 10A TO220-2L |
8,352 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
|
|
|
Semtech |
DIODE GEN PURP 1KV 1.5A SMB |
8,766 |
|
- | Standard | 1000V | 1.5A | 1.15V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 70A DO5 |
2,034 |
|
- | Standard | 1600V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 70A DO5 |
3,312 |
|
- | Standard, Reverse Polarity | 1600V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,336 |
|
Military, MIL-PRF-19500/359 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 75MA DO213AA |
2,844 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
|
|
|
Microsemi |
SCHOTTKY DIODE |
3,960 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
4,860 |
|
- | Standard | 1200V | 150A | 2.05V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 26µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
5,112 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 30A DO5 |
8,370 |
|
- | Standard | 800V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |