Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 621/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
DIODE GEN PURP 600V 20A TO247 |
6,318 |
|
- | Standard | 600V | 20A | 2.24V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 (HA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
7,668 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
6,354 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 20A TO220AC |
5,958 |
|
- | Schottky | 35V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA DO213AA |
8,748 |
|
- | Standard | 50V | 300mA | 680mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO247AC |
3,896 |
|
HEXFRED® | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 16A DO203AA |
8,100 |
|
- | Standard, Reverse Polarity | 100V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 45A TO247AD |
2,016 |
|
- | Standard | 800V | 45A | 1.28V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 800V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1800V 30A TO247 |
2,970 |
|
- | Standard | 1800V | 30A | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1800V | 10pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 65A 1600V TO-247 |
4,086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC |
2,988 |
|
- | Standard | 200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC |
6,246 |
|
- | Standard | 400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A TO247AD |
6,444 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 1200V | 50A | 2.55V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 262ns | 330µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
4,122 |
|
- | Standard | 1200V | 25A | 2.05V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 5.2µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 30V 200MA DO213AA |
8,082 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220AB |
5,382 |
|
- | Schottky | 100V | 20A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A DO203AA |
6,084 |
|
- | Standard, Reverse Polarity | 400V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 29A TO252-2 |
6,894 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 29A (DC) | 1.9V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 632pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
4,014 |
|
- | Standard | 50V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
8,712 |
|
- | Standard | 1200V | 25A (DC) | 1.97V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE ZENER 125 V DO-35 |
3,672 |
|
- | Standard | 125V | 150mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
5,994 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA DO213AA |
5,310 |
|
- | Standard | 75V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE AVALANCHE 1.6KV 2.3A |
5,274 |
|
- | Avalanche | 1600V | 2.3A | 1.34V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1600V | - | Through Hole | Radial | - | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO252-3 |
2,178 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 20A TO220AB |
8,550 |
|
- | Standard | 1600V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 125MA DO213AA |
8,046 |
|
- | Standard | 75V | 125mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 850MA AXIAL |
4,554 |
|
- | Standard | 800V | 850mA | 1.35V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 1µA @ 800V | 18pF @ 5V, 1MHz | Through Hole | Axial | - | - |
|
|
|
Semtech |
DIODE GEN PURP 200V 1.25A AXIAL |
6,678 |
|
- | Standard | 200V | 1.25A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 200V | 30pF @ 5V, 1MHz | Through Hole | Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A TO220AC |
5,868 |
|
- | Schottky | 45V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |