Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 612/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
RECT 1000V 25A TO220 ISO |
7,686 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE GEN PURP 600V 20A TO263AA |
7,524 |
|
FRED | Standard | 600V | 20A | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DUMMY 57 |
6,534 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DUMMY 57 |
6,858 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC |
2,538 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220 |
3,672 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
3,078 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 150pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE SCHOTTKY 100V 16A TO263AB |
7,488 |
|
- | Schottky | 100V | 16A | 790mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
3,562 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3.93V @ 32A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
2,394 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3.93V @ 32A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220AC |
4,752 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SBD 6A 650V D2PAK-3 |
2,088 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO263AB |
4,140 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 10A TO220AC |
6,696 |
|
- | Standard | 600V | 10A | 2.35V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
650V 8A SIC SBD |
8,640 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SIC SCHOTTKY 650V 4A TO220 |
3,618 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 125pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 5A TO220AC |
5,004 |
|
- | Standard | 600V | 5A | 2.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
IXYS |
DIODE FAST REC 600V 37A TO263AB |
7,668 |
|
FRED | Standard | 600V | 37A | 1.6V @ 37A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE SCHOTTKY 45V 25A TO220AC |
7,488 |
|
- | Schottky | 45V | 25A | 690mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO262AA |
5,868 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 15A | 2.45V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 15µA @ 600V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
3,762 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 15A | 2.45V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 15µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO263AB |
5,796 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SWITCH 75V 200MA MELF MIL |
5,400 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
7,038 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER HYPERFAST 30A TO-247AD |
8,388 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER HYPERFAST 30A TO-247AD |
7,380 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO263AB |
2,646 |
|
- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
3,366 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
7,290 |
|
FRED Pt® | Standard | 600V | 60A | 1.68V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 81ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
4,554 |
|
- | Schottky | 45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 600pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 150°C |