Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 571/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3.9A TO263AC |
8,280 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 3.9A | 1.2V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 25µA @ 600V | 150pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 40A TO263AC |
5,418 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 40A | 660mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A ITO220AB |
3,544 |
|
Automotive, AEC-Q101 | Standard | 400V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 800V 5A SMC |
7,344 |
|
- | Standard | 800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
7,164 |
|
HEXFRED® | Standard | 600V | 8A (DC) | 2.1V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
7,290 |
|
HEXFRED® | Standard | 600V | 8A (DC) | 2.1V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 7.5A D2PAK |
7,020 |
|
- | Schottky | 45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 8A TO220AC |
3,438 |
|
- | Standard | - | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 8A TO220AC |
7,758 |
|
Automotive, AEC-Q101 | Standard | - | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.8A TO277A |
5,346 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 120V ITO220AB |
6,876 |
|
- | Schottky | 120V | 20A | 1.12V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
8,856 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
5,904 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
3,798 |
|
FRED Pt® | Standard | 600V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
6,480 |
|
FRED Pt® | Standard | 600V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
7,074 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
3,708 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
8,046 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
5,076 |
|
FRED Pt® | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6.5A P600 |
3,132 |
|
TMBS® | Schottky | 45V | 6.5A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 45V | 2050pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V ITO-220AB |
2,160 |
|
- | Schottky | 80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 150V ITO220AB |
6,804 |
|
- | Schottky | 150V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 650V DIE |
4,734 |
|
- | Standard | 650V | - | 2.9V @ 25A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A ITO220AC |
3,438 |
|
- | Standard | 600V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
3,454 |
|
- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
2,916 |
|
- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
|
Bourns |
DIODE SCHOTTKY 30V 3A SMA |
6,930 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 10A TO220AC |
2,772 |
|
- | Schottky | 90V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V ITO-220AB |
8,262 |
|
- | Schottky | 80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 80V 25A POWERDI5060-8 |
3,798 |
|
TrenchSBR | Super Barrier | 80V | 25A | 610mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | -55°C ~ 150°C |