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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 555/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
EGP31G-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 3A DO201AD
6,822
SUPERECTIFIER®
Standard
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
4µA @ 400V
48pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51A-E3/C
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 5A DO201AD
3,096
SUPERECTIFIER®
Standard
50V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51A-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 5A DO201AD
2,412
SUPERECTIFIER®
Standard
50V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51B-E3/C
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 5A DO201AD
6,264
SUPERECTIFIER®
Standard
100V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51B-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 5A DO201AD
4,950
SUPERECTIFIER®
Standard
100V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51C-E3/C
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 5A DO201AD
2,448
SUPERECTIFIER®
Standard
150V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51C-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 5A DO201AD
4,122
SUPERECTIFIER®
Standard
150V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51D-E3/C
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 5A DO201AD
6,984
SUPERECTIFIER®
Standard
200V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51D-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 5A DO201AD
2,880
SUPERECTIFIER®
Standard
200V
5A
960mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51F-E3/C
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 5A DO201AD
5,292
SUPERECTIFIER®
Standard
300V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
48pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51F-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 5A DO201AD
3,870
SUPERECTIFIER®
Standard
300V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
48pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
EGP51G-E3/D
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 5A DO201AD
2,160
SUPERECTIFIER®
Standard
400V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
48pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
SK12H45 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 12A DO201AD
2,700
-
Schottky
45V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 45V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK12H60 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 12A DO201AD
6,120
-
Schottky
60V
12A
700mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
HERA801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
6,084
-
Standard
50V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
8,406
-
Standard
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
2,016
-
Standard
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AC
6,426
-
Standard
300V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
4,788
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA806G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC
6,804
-
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 600V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERA807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A TO220AC
3,312
-
Standard
800V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 800V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1635 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 35V 16A TO220AC
3,258
-
Schottky
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1645 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 16A TO220AC
2,304
-
Schottky
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1650 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 16A TO220AC
4,914
-
Schottky
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1660 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 16A TO220AC
6,012
-
Schottky
60V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1690 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 16A TO220AC
3,366
-
Schottky
90V
16A
850mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 90V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SRA10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
6,534
-
Schottky
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VFT760-M3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 7.5A 60V ITO-220A
4,068
-
Schottky
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
TSPB15U100S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A SMPC4.0
2,178
-
Schottky
100V
15A
700mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
SR1202HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 12A DO201AD
2,268
Automotive, AEC-Q101
Schottky
20V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C