Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 541/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SMC Diode Solutions |
DIODE GEN PURP 600V 20A ITO220AC |
7,794 |
|
- | Standard | 600V | 20A | 2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.3A TO277A |
6,048 |
|
- | Schottky | 50V | 5.3A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
2,862 |
|
eSMP® | Avalanche | 800V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.6A TO277 |
7,506 |
|
eSMP® | Avalanche | 1000V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
8,118 |
|
- | Standard | 200V | 1.5A | 920mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
6,192 |
|
- | Standard | 200V | 1.5A | 920mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
4,356 |
|
- | Standard | 200V | 1.5A | 920mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 400V 1.2A AXIAL |
2,790 |
|
- | Standard | 400V | 1.2A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 400V 1.2A AXIAL |
7,992 |
|
- | Standard | 400V | 1.2A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 400V 2A AXIAL |
8,370 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO201AD |
2,862 |
|
- | Schottky | 100V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 40V DO-214AB |
2,250 |
|
- | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 40V DO-214AB |
5,652 |
|
- | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 5A DO201AD |
6,498 |
|
- | Schottky | 50V | 5A | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
3,852 |
|
Automotive, AEC-Q101 | Standard | 50V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
6,804 |
|
Automotive, AEC-Q101 | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
4,338 |
|
Automotive, AEC-Q101 | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
3,598 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
6,786 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
Power Integrations |
DIODE GEN PURP 530V 3A 8SO |
5,400 |
|
Qspeed™ | Standard | 530V | 3A | 1.71V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 34.3ns | 250µA @ 530V | 15pF @ 10V, 1MHz | Surface Mount | 8-SOIC (0.154", 3.90mm Width), 7 Leads | 8-SO | 150°C (Max) |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 5A TO252 |
3,526 |
|
- | Schottky | 100V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A D-PAK |
8,748 |
|
FRED Pt® | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 3µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A D-PAK |
5,238 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 3µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A DO201AD |
2,970 |
|
- | Schottky | 150V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 60V 1A SMA |
3,744 |
|
Automotive, AEC-Q101 | Schottky | 60V | 1A | 670mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4µA @ 60V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -40°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
4,896 |
|
- | Standard | 600V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A M-FLAT |
5,598 |
|
- | Standard | 400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
DIODE SCHOTTKY 100V 5A SMC |
2,088 |
|
- | Schottky | 100V | 5A (DC) | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | 2-SMD, No Lead | 3220/DO-214AB | -55°C ~ 125°C |
||
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A ITO220AC |
4,140 |
|
- | Schottky | 60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A ITO220AC |
4,140 |
|
- | Standard | 600V | 5A | 2.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | 30pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |