Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 532/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
6,804 |
|
eSMP® | Avalanche | 600V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 600V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
3,330 |
|
eSMP® | Avalanche | 200V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 200V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AB |
8,514 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A DO214AB |
2,592 |
|
Automotive, AEC-Q101 | Schottky | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 400V 1.5A PMDS |
5,526 |
|
- | Schottky | 400V | 1.5A | 1.2V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
|
SMC Diode Solutions |
PIV 45V IO 7.5A CHIP SIZE 90MIL |
6,750 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 150V IO 7.5A CHIP SIZE 90MIL |
7,128 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO204AC |
4,824 |
|
SUPERECTIFIER® | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO204AC |
5,076 |
|
SUPERECTIFIER® | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO204AC |
3,348 |
|
SUPERECTIFIER® | Standard | 300V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO204AC |
4,284 |
|
SUPERECTIFIER® | Standard | 400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 3A SMC |
2,100 |
|
Automotive, AEC-Q101 | Schottky | 100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
|
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|
Torex Semiconductor Ltd |
SCHOTTKY BARRIER DIODE |
3,564 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 200V 15A D2PAK |
6,102 |
|
- | Schottky | 200V | 15A | 920mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | 300pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 30V DO-214AB |
8,964 |
|
- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 30V DO-214AB |
5,184 |
|
- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A TO277A |
3,672 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A M-FLAT |
6,102 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 3A M-FLAT |
4,842 |
|
- | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | 102pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.6A TO277A |
7,218 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3.6A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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|
Comchip Technology |
DIODE GEN PURP 50V 6A R6 |
6,894 |
|
- | Standard | 50V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
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Comchip Technology |
DIODE GEN PURP 100V 6A R6 |
7,434 |
|
- | Standard | 100V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
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Comchip Technology |
DIODE GEN PURP 200V 6A R6 |
7,164 |
|
- | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
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Comchip Technology |
DIODE GEN PURP 400V 6A R6 |
3,528 |
|
- | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 600V 6A R6 |
2,808 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 800V 6A R6 |
2,088 |
|
- | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
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|
Comchip Technology |
DIODE GEN PURP 1KV 6A R6 |
2,988 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 300V 5A DPAK |
2,880 |
|
SWITCHMODE™ | Standard | 300V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 3A DO221AC |
3,888 |
|
Automotive, AEC-Q101, TMBS®, SlimSMA™ | Schottky | 45V | 3A | 560mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 650µA @ 45V | 740pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC | -40°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 6A DO201AD |
7,884 |
|
Automotive, AEC-Q101 | Standard | 500V | 6A | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |