Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 491/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE GEN PURP 600V 3A AXIAL |
2,196 |
|
- | Standard | 600V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
2,718 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 100µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
3,114 |
|
- | Standard | 600V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 500MA AXIAL |
7,866 |
|
- | Standard | 400V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 500MA AXIAL |
2,106 |
|
- | Standard | 400V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 500MA AXIAL |
5,814 |
|
- | Standard | 200V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 800MA AXIAL |
3,526 |
|
- | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 1A SJP |
8,190 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 125°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 1A SJP |
6,966 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 1A SJP |
8,136 |
|
- | Schottky | 60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 1A SJP |
2,862 |
|
- | Schottky | 90V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 1A SJP |
8,658 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 1.5A SJP |
8,892 |
|
- | Schottky | 60V | 1.5A | 700mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
3,330 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
6,102 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
8,748 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
3,564 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 4A TO277A |
3,636 |
|
Automotive, AEC-Q101, eSMP® | Standard | 800V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 4A TO277A |
3,096 |
|
Automotive, AEC-Q101, eSMP® | Standard | 1000V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
3,420 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
6,948 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
7,236 |
|
- | Super Barrier | 60V | 5A | 520mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Bourns |
DIO RECT VRRM 200V 3A SMC |
2,682 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
8,766 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
2,754 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 50V 3A DO214AB |
3,526 |
|
- | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 100V 3A DO214AB |
8,730 |
|
- | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 3A SMC |
8,694 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 10A 5DFN |
7,938 |
|
- | Schottky | 120V | 10A | 820mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 6A R-6 |
2,646 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |