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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 483/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RS3J-M3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AB	7,524	-	Standard	600V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3K-M3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO214AB	5,076	-	Standard	800V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	34pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CMHD2003 BK	Central Semiconductor Corp	DIODE GEN PURP 250V 200MA SOD123	6,876	-	Standard	250V	200mA	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
HS5A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	6,120	-	Standard	50V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	7,308	-	Standard	100V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5A R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	2,718	-	Standard	50V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	2,196	-	Standard	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	8,064	-	Standard	200V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	8,280	-	Standard	400V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5J R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	3,420	-	Standard	600V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	5,886	-	Standard	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK315B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AA	7,038	-	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK320B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	4,968	-	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK320BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	2,394	Automotive, AEC-Q101	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR320S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	6,174	-	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ES3A R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	4,320	-	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3AHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	7,884	Automotive, AEC-Q101	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	2,880	-	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3BHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	4,122	Automotive, AEC-Q101	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3C R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	5,922	-	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3CHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	8,676	Automotive, AEC-Q101	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	3,798	Automotive, AEC-Q101	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	2,196	-	Standard	100V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	4,536	-	Standard	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	2,682	-	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR305S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	8,280	-	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	7,038	-	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	6,642	-	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
XBS204S19R-G	Torex Semiconductor Ltd	SCHOTTKY BARRIER DIODE	3,906	*	-	-	-	-	-	-	-	-	-	-	-	-
XBS204V19R-G	Torex Semiconductor Ltd	SCHOTTKY BARRIER DIODE	8,820	*	-	-	-	-	-	-	-	-	-	-	-	-

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