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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 477/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK54BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A DO214AA
3,186
Automotive, AEC-Q101
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK55B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
2,196
-
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK55BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
6,408
Automotive, AEC-Q101
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK56B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
2,790
-
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK56BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
6,894
Automotive, AEC-Q101
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CDBC220LR-HF
Comchip Technology
DIODE SCHOTTKY 20V 2A DO214AB
7,470
-
Schottky
20V
2A
400mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-50°C ~ 150°C
RB168M150TR
Rohm Semiconductor
DIODE SCHOTTKY 150V 1A PMDU
6,534
Automotive, AEC-Q101
Schottky
150V
1A
840mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 150V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB068L100TE25
Rohm Semiconductor
DIODE SCHOTTKY 100V 2A PMDS
2,236
-
Schottky
100V
2A
800mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
ES1PBHM3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO220AA
3,834
eSMP®
Standard
100V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
ES1PCHM3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO220AA
2,844
eSMP®
Standard
150V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
SR515HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A DO201AD
5,166
Automotive, AEC-Q101
Schottky
150V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR520HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 5A DO201AD
8,820
Automotive, AEC-Q101
Schottky
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S4K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 4A DO214AB
5,220
-
Standard
800V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,050
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
5,886
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
3,492
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2,790
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SBR02U100LPQ-7B
Diodes Incorporated
DIODE SBR 100V 250MA 2DFN
2,934
Automotive, AEC-Q101
Super Barrier
100V
250mA
800mV @ 200mA
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 75V
-
Surface Mount
0402 (1006 Metric)
X1-DFN1006-2
-65°C ~ 150°C
SF31G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,078
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
4,788
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
6,102
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
6A05G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
6,912
-
Standard
50V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
60pF @ 4V, 1MHz
Through Hole
-
R-6
-55°C ~ 150°C
ESH1PA-M3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO220AA
2,772
eSMP®
Standard
50V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ESH1PBHM3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO220AA
5,508
eSMP®
Standard
100V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ESH1PCHM3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO220AA
4,698
eSMP®
Standard
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ESH1PDHM3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO220AA
2,412
eSMP®
Standard
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
CMS17(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 2A M-FLAT
6,120
-
Schottky
30V
2A
480mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
90pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
SURD8330T4G
ON Semiconductor
DIODE GEN PURP 300V 3A DPAK
5,508
SWITCHMODE™
Standard
300V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 175°C
1N5407-B
Diodes Incorporated
DIODE GEN PURP 800V 3A DO201AD
4,284
-
Standard
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
ES3DB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
7,866
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C