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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 430/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
NRVHPRS1JFA
ON Semiconductor
RECTIFIER 600V .8A
2,178
*
-
-
-
-
-
-
-
-
-
-
-
-
ES2AHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
7,074
Automotive, AEC-Q101
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2BHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
4,878
Automotive, AEC-Q101
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2CHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
6,228
Automotive, AEC-Q101
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2DHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
2,214
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2FHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
4,284
Automotive, AEC-Q101
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2GHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
7,776
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
1N5820 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
7,992
-
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
FR301G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,400
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR302G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3,528
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR303G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
8,334
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR304G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2,268
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RB160L-40TE25
Rohm Semiconductor
DIODE SCHOTTKY 40V 1A PMDS
3,762
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
1C5711AG.T2
SMC Diode Solutions
PIV 50V IO 1MA CHIP SIZE 17.5MIL
4,140
*
-
-
-
-
-
-
-
-
-
-
-
-
BYS12-90HE3_A/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC
5,652
Automotive, AEC-Q100
Schottky
90V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SURS8105T3G
ON Semiconductor
DIODE GEN PURP 50V 1A SMB
3,060
-
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 50V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
SURS8110T3G
ON Semiconductor
DIODE GEN PURP 100V 1A SMB
4,032
-
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 100V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
SURS8115T3G
ON Semiconductor
DIODE GEN PURP 150V 1A SMB
5,490
-
Standard
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
SURS8140T3G
ON Semiconductor
DIODE GEN PURP 400V 1A SMB
5,382
Automotive, AEC-Q101, SWITCHMODE™
Standard
400V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
ESH2B-M3/5BT
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A DO214AA
5,994
-
Standard
100V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C-M3/5BT
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A DO214AA
8,064
-
Standard
150V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2D-M3/5BT
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO214AA
2,214
-
Standard
200V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2B-M3/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A DO214AA
8,532
-
Standard
100V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C-M3/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A DO214AA
5,976
-
Standard
150V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2D-M3/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO214AA
3,024
-
Standard
200V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ES2F R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
6,174
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ESH2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
6,462
-
Standard
100V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
7,722
-
Standard
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
CMG07(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
8,424
-
Standard
400V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
100ns
-
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-
S2D/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.5A DO214AA
8,334
-
Standard
200V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C