Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Rectifiers - Single

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 331/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RS1DL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
5,850
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
5,130
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
8,820
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
7,722
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SR115 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A DO204AL
6,084
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
2A07G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
2,412
-
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
F1T6G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
3,582
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
BAT41-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 100MA DO35
5,940
Automotive, AEC-Q101
Schottky
100V
100mA (DC)
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
100nA @ 100V
2pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAT42-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
6,426
Automotive, AEC-Q101
Schottky
30V
200mA (DC)
650mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAT43-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
5,796
Automotive, AEC-Q101
Schottky
30V
200mA (DC)
450mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAT41-TR
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 100MA DO35
8,964
Automotive, AEC-Q101
Schottky
100V
100mA (DC)
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
100nA @ 100V
2pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAT43-TR
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
8,658
Automotive, AEC-Q101
Schottky
30V
200mA (DC)
450mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
2A01GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
6,480
Automotive, AEC-Q101
Standard
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1PS76SB21Z
Nexperia
DIODE SCHOTTKY 40V 200MA SOD323
2,484
-
Schottky
40V
200mA (DC)
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
15µA @ 30V
40pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
RSFALHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
3,474
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
6,444
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
3,312
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
5,940
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
4,770
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
8,622
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
TSS40L RWG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA 1005
3,888
-
Schottky
40V
200mA
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
5ns
200nA @ 30V
5pF @ 0V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-65°C ~ 125°C
TSS42L RWG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200A 1005
2,124
-
Schottky
30V
200mA
650mV @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-55°C ~ 125°C
TSS43L RWG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200A 1005
3,508
-
Schottky
30V
200mA
450mV @ 15mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-55°C ~ 125°C
TSS54L RWG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA 1005
5,562
-
Schottky
30V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-65°C ~ 125°C
TSS70L RWG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 70V 70MA 1005
4,932
-
Schottky
70V
70mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-65°C ~ 125°C
F1T2G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A TS-1
3,366
-
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
F1T3G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A TS-1
3,472
-
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
1N5817 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
5,130
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
S1A-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 50V DO-214AC
2,088
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 50V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1B-M3/61T
Vishay Semiconductor Diodes Division
DIODE GPP 1A 100V DO-214AC
2,430
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 100V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C